| Featured Products this Week |
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| 300 A High-Power IGBT Module | |
IGBT
from Fuji Electric
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| The 2MBI300XHA170-50 from Fuji Electric is a High-Power IGBT Module designed for high-speed switching performance. It has a collector-to-emitter voltage of 1700 V and a collector current of up to 300 A. This IGBT has a low collector-emitter saturation voltage. It is available as a module that measures 108 x 62 x 30 mm. |
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| High-Voltage Power Switch for USB Power Devices | |
Power Switch IC
from Diodes Incorporated
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| The AP22950CZ15-7 from Diodes Incorporated is an Automotive-Grade High-Voltage Power Switch for USB power devices sink path applications. It requires an input voltage of 2.5-22.5 V. This IC provides a maximum continuous switch current of up to 5A. It is available in a surface-mount package that measures 2.55 x 1.55 x 0.65. |
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| 715 W N-type Bifacial Solar Panel Module | |
Solar Panels
from Canadian Solar
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| The CS7N-715TB-AG from Canadian Solar is an N-type Bifacial Solar Panel Module. It delivers an output power of 715 W and has an efficiency of 23.0%. This solar panel requires a supply voltage of 40.6 V. This solar panel has low-temperature coefficients. It is available as a module that measures 2384 x 1303 x 33 mm. |
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| 250 W Convection-Cooled AC-DC Power Supply | |
AC to DC Converter
from XP Power
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| The GCS250PS48-C from XP Power is a Convection-Cooled AC-DC Power Supply that converts an AC input voltage of 85-264 V to a single DC output voltage of 12-56 V. This single-output converter delivers an output power of over 250 W. It is available in a chassis mount package that measures 139.7 x 88.5 x 43.2 mm. |
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| 610 W P-Type Mono PERC Half-Cell Module | |
Solar Panels
from JA Solar
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| The JAM78S30-610/GR from JA Solar is a P-Type Mono PERC Half-Cell Module designed for use on commercial and industrial roofs and in large-scale PV projects. It provides a maximum output power of 610 W with a peak current of 13.33 A and a voltage of 45.77 V. It is available as a module that measures 2465 x 1134 x 35 mm. |
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| 200 V N-Channel Power MOSFET | |
MOSFET
from iDEAL Semiconductor Devices
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| The iS20M028S1P from iDEAL Semiconductor Devices is an N-channel power MOSFET. It has a drain-source voltage of over 200 V, a gate threshold voltage of 4.1 V, and a drain-source on-resistance of 25 milli-ohms. This RoHS-compliant MOSFET is available in a surface-mount package that measures 31.24 x 10.66 x 4.82 mm. |
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| Sponsored by Smart Data for Energy Summit | | Smart Data for Energy Summit | | The 3rd Annual Smart Data for Energy Summit is a senior-level educational and networking event that aims to promote collaboration among large built environments in utilizing smart, data-driven capabilities for energy optimization in planning, design, build, retrofit, management, and daily operations and maintenance phases. Click here to learn more. | | | |
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| High-Power AC and DC Chokes | |
Power Inductor
from Bourns
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| The 15323x Series from Bourns are AC and DC Chokes. These ferrite-core inductors have an inductance in the range of 300-1000 μH. They have current ratings of up to 32 A and a DC resistance in the range of 12-34 milli-ohms. These RoHS-compliant power inductors are available in screw-mount packages that measure 97 x 87 mm. |
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| 40 V Automotive-Grade N-Channel MOSFET | |
MOSFET
from Nexperia
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| The BUK9R4R5-40H from Nexperia is an Automotive-Grade N-Channel MOSFET designed to deliver high performance and reliability. This MOSFET has a drain-source voltage of 40 V and a gate threshold voltage of up to 2.15 V. It is available in a surface-mount package that measures 5 x 6 mm. |
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| 6.49 W Isolated DC-DC Converter Module | |
DC to DC Converter
from Murata
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| The MYBSP00502ABFU from Murata is an Isolated DC-DC Converter Module with PWM control for IEEE 802.3af Class 2 PoE PD applications. It converts an input voltage of 37-57 V to an output voltage of 5 V. It delivers an output current of 1.3 A. It is available in a surface-mount package that measures 26 x 14.8 x 6.2 mm. |
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| 1200 V Silicon Carbide MOSFET | |
MOSFET
from NoMIS Power
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| The N3PT028MP120K from NoMIS Power is a Silicon Carbide MOSFET. It has a drain-source voltage of 1200 V, a gate threshold voltage of less than 3 V, and a drain-to-source resistance of 28 milli-ohms. It has a continuous drain current of 72 A. It is available in a through-hole package that measures 41.42 x 16.13 x 5.21 mm. |
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| 800 V Triac for AC Switching Applications | |
Triac
from STMicroelectronics
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| The Z0103NA 2AL2 from STMicroelectronics is a Triac designed for general-purpose AC switching. It has a breakover voltage of 800 V and a breakover current of up to 8.5 A. This thyristor has a gate trigger voltage of 1.3 V and a gate trigger current of over 25 mA. It is available in a through-hole package that measures 17.10 x 4.70 mm. |
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| IP67-Rated Right-Angle M8 Connector | |
Power Connector
from Same Sky
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| The CDM845-03A-FP-F010-67 from Same Sky is an M8 Male Connector that has been designed with a right-angle orientation. It has a voltage rating of 60 V and a current rating of 3 A. This connector has a contact resistance of less than 5 milli-ohms. It is available in a PCB panel-mount package that measures 12.8 x 10.2 mm. |
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| Sponsored by Smart Data for Energy Summit | | |
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| 800 W AC-DC Power Supplies | |
AC to DC Converter
from TDK Corporation
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| The CUS800M Series from TDK Corporation are AC-DC Power Supplies that step down AC input voltages of 85-265 V to DC output voltages of 12-48 V. They deliver an output power of 800 W and have an efficiency of up to 94.6%. These converters are available in chassis-mount packages that measure 171 x 85 x 42.5 mm. |
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| 4 kW Isolated Bi-directional DC-DC Power Converter | |
DC to DC Converter
from Calex Manufacturing
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| The HBC800 Series from Calex Manufacturing are Isolated Bidirectional DC-DC Power Converters that step down a high-side input voltage of 440–875 V to a low-side output of 12 V or 24 V, and also step up a low-side input of 12 V or 24 V to a high-side output of 440–875 V. These converters provide an output current of up to 300 A. |
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| 400 V SiC MOSFET | |
MOSFET
from Infineon Technologies
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| The IMW40R045M2H from Infineon Technologies is a Silicon Carbide (SiC) Power MOSFET designed for high-frequency switching and synchronous rectification. It has a drain-source breakdown voltage of 400 V and a drain-source resistance of 45.2 milli-ohms. It is available in a through-hole package that measures 41.42 x 16.13 x 5.21 mm. |
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| 1000 W Military-Grade Isolated DC-DC Converter | |
DC to DC Converter
from SynQor
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| The VPX-6U-DC28P-001 from SynQor is a Military-Grade Isolated DC-DC Converter that converts an input voltage of 18-40 V to an output voltage of -12/12 V. It has a current rating of 80 A and delivers an output power of 1000 W. It is available as a module that measures 233.35 x 168.51 x 24.13 mm. |
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