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| 10 W DC-DC Converters | |
DC to DC Converter
from P-DUKE Power
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| The URCD10U Series from P-DUKE Power are DC-DC Converters that convert an input voltage of 14-160 V to an output voltage of ±15 V. They deliver an output current of up to 3000 A and offer efficiency of up to 87%. These converters provide an isolated output power of 10 W and offer an input-output isolation voltage of 3000 VDC. They have a fuse installed along with protection features such as inrush current limit, over-current, over-voltage, over-temperature, short-circuit, reverse polarity protection, and under-voltage protection. |
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| 700 V E-Mode PowerGaN Transistor | |
GaN Power Transistor
from STMicroelectronics
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| The SGT105R70ILB from STMicroelectronics is an Enhancement Mode PowerGaN Transistor that is suitable for adapters in tablets, notebooks, and AIO, USB Type-C PD adapters and quick chargers, AC-DC converters, and DC-DC converters. This transistor has a drain-source voltage of 700 V, a gate threshold voltage of less than 2.5 V, and a drain-source on-resistance of 80 milli-ohms. It has a continuous drain current of up to 21.7 A and a pulsed drain current of less than 43.5 A. |
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| 600 W AC-DC Power Supply | |
AC to DC Converter
from Advanced Energy Industries
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| The AIF13WAC-01NT from Advanced Energy Industries is an AC-DC Power Supply that converts an AC input voltage of 86-264 V to a DC output voltage of 48 V. It delivers an output power of 600 W and has an efficiency of up to 94%. This single-output converter can withstand an input-output isolation voltage of up to 4000 VAC and includes protection features such as UVLO, overvoltage protection (OVP), and overcurrent protection (OCP). It is also integrated with an internal inrush current limiter to minimize input surge during startup. |
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| Space Grade Surface-Mount Common Mode Choke | |
Power Inductor
from Vishay
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| The SGCM05339 Series from Vishay are Space-Grade Surface-Mount Common Mode Chokes. They have an inductance of 320-10400 µH and a tolerance of ±40%. These MIL-STD-981/MIL-PRF-27-grade power inductors have a heat rating current of 2.02-14.43 A and a DC resistance of up to 0.1318 ohms. They have a self-shielded composite construction and have broadband frequency responses. These nanocrystalline power inductors feature tin-lead terminations and have a common mode impedance of 540-3600 ohms. |
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| Sponsored by Europe Battery Energy Storage Summit 2026 | | Europe Battery Energy Storage Summit 2026 | | The Europe Battery Energy Storage Summit 2026 will bring together industry experts, innovators, and policymakers to accelerate the development of advanced energy storage solutions across Europe. The event will focus on battery technologies, grid integration, renewable energy applications, sustainability strategies, and the evolving policy and investment landscape shaping the future of energy storage. Click here to learn more. | | | |
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| AEC-Q101-Qualified N-Channel E-Mode MOSFET | |
MOSFET
from Diodes Incorporated
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| The DMTH10H1M7SPGWQ-13 from Diodes Incorporated is an AEC-Q101-Qualified N-Channel Enhancement Mode MOSFET that is designed to meet the stringent requirements of automotive applications requiring specific change control. It has a drain-source breakdown voltage of over 100 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of 1.5 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of up to 352 A and a power dissipation of less than 405 W. |
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| 15 A Synchronous Step-Down Regulator | |
DC to DC Converter
from MaxLinear
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| The MxL76125 from MaxLinear is a Synchronous Step-Down Regulator that steps down an input voltage of 5-22 V to an output voltage of 0.8-3.3 V. This step-down converter delivers a constant output current of 15 A and has an efficiency of 91.2 %. It features overcurrent, overtemperature, overvoltage, short-circuit, and UVLO protection circuitries, ensuring safe operation under abnormal operating conditions. This RoHS-compliant converter is available in a surface-mount package that measures 4 x 5 mm. |
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| 1200 V IGBT for ESS and Industrial Drives | |
IGBT
from Infineon Technologies
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| The FF300R12MS4 from Infineon Technologies is an IGBT that is ideal for energy storage systems (ESS) and industrial drives applications. It has a collector-to-emitter voltage of up to 1200 V, a gate-emitter threshold voltage of up to 6.5 V, and a saturated collector-to-emitter voltage of 3.75 V. This IGBT has a continuous DC collector current of 300 A and a repetitive peak collector current of 600 A. It incorporates the EconoDUAL™3 module with the fast IGBT2 technology for high-frequency switching. It features an isolation test voltage of 2.5 kV. |
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| 160 W Polycrystalline Silicon Solar Cell | |
Solar Panels
from SolarTech Power
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| The SPM160P-S-F from SolarTech Power is a Polycrystalline Silicon Solar Cell. It delivers a peak power output of 160 W at standard test condition (STC) with a maximum power voltage of 18.9 V and a maximum power current of 8.47 A. This solar panel has an open-circuit voltage of 22.9 V and a short-circuit current of 8.68 A. It offers a module efficiency of 16.5% under STC. It has a maximum series fuse rating of 15 A and supports a maximum system voltage of 600 V. This solar panel measures 1466 x 660 x 50 mm and weighs 13 kg. |
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| Featured Interview | | Featured Interview | | everything PE recently interviewed Shinichi Kusunoki, Group Vice President of Semiconductor and Device Marketing Division at Mitsubishi Electric Corporation. Mitsubishi Electric manufactures a wide range of electrical and electronic equipment. The company operates in diverse fields like energy systems, industrial automation, and electronic devices. Click here to learn more. | | | |
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| 10 F Low-Profile Ultracapacitor Cell | |
Supercapacitor
from Tecate Group
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| The PC10 from Tecate Group is a Low-Profile Ultracapacitor Cell ideal for high-reliability military applications. It has a capacitance of 10 F and a capacitance tolerance of ±20%. This supercapacitor has a voltage rating of 2.5 V and an ESR (DC) of 180 milli-ohms. It has an endurance of 1000 hours when operated at 2.5 V and 70°C. This low-profile supercapacitor has an enhanced seal and stainless steel construction with a 10-year life capability. It has quick charge and discharge cycles and replaces the Maxwell PC5 & PC10. |
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| 100 W Isolated Regulated DC-DC Converter | |
DC to DC Converter
from Pico Electronics
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| The FD12S from Pico Electronics is an Isolated Regulated DC-DC Converter that converts an input voltage of 200-380 V to an output voltage of 12 V. This converter delivers an output current of up to 8.33 A and dissipates an output power of 100 W. It offers an efficiency of 85% and operates from -40°C to 85°C. This single-output DC-DC converter has an input-output isolation of up to 4242 V and features trim capability and remote shutdown. It is available in a through-hole package that measures 116.848 x 63.500 mm. |
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| 30000 µF Aluminium Supercapacitor | |
Supercapacitor
from Kendeil
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| The K11350303SHM0L220 from Kendeil is an Aluminium Supercapacitor that is designed for bulk energy storage applications. It has a capacitance of 30000 µF and a capacitance tolerance of ±20%. This capacitor has a voltage rating of 350-450 V (DC). It is enclosed in an aluminium can with an insulated sleeve for surge protection and has a current rating of up to 21.4 A. This capacitor is available in a screw-mount package that measures 90 x 220 mm. |
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| 4500 V High Voltage Insulated Type Diode | |
Power Diode
from Mitsubishi Electric
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| The RM750DC-90X from Mitsubishi Electric is a High Voltage Diode Module for high power switching applications. It has a peak repetitive reverse voltage of over 4500 V, and a forward voltage of up to 3.3 V. This insulated type diode has a continuous forward current of up to 750 A and a reverse recovery current of up to 1080 A. It has a recovery time of 1.5-1.7 µs and has a power dissipation of 2 MW. It is available in a surface-mount package that measures 130 x 140 x 29.5 mm and is ideal for traction drives, inverters, and DC choppers. |
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| Sponsored by Europe Battery Energy Storage Summit 2026 | | |
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| 1200 V SiC Half-Bridge Module | |
MOSFET
from SemiQ
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| The GCMX1P0B120S4B1 from SemiQ is a SiC Half-Bridge MOSFET. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of up to 4 V, and a drain-source on-resistance of 1.7 milli-ohms. This MOSFET has a continuous drain current of 1186 A and a pulsed drain current of 2800 A. This RoHS-compliant MOSFET includes a Kelvin reference for stable operation and has an isolated baseplate. It is tested at voltages exceeding 1350 V. It is available as a module that measures 152 x 62.0 x 21.0 mm. |
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| 650 V Bi-Directional GaN Switch | |
GaN Power Transistor
from Renesas
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| The TP65B110HRU from Renesas is a normally-off Bi-Directional GaN Switch. It has a drain-source voltage of over 650 V, a gate threshold voltage of 3 V, and a drain-source on-resistance of 140 milli-ohms. This GaN transistor has a continuous drain current of up to 24 A and a pulsed drain current of less than 110 A. It features an insulated gate design with a high threshold voltage and has a built-in freewheeling diode with low voltage drop. This GaN transistor has a negligible reverse recovery charge and low gate and output charge. |
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| Low Loss Power Distribution Load Switch | |
e-Fuses
from Silergy
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| The SY20803ADRC from Silergy is a Low Loss Power Distribution Load Switch. It requires an input of 2.5-5.5 V. This protection switch delivers an output current of 3 A and has a quiescent current of 32 µA. It is equipped with a current limiting function to protect the power source from overcurrent and short circuit conditions. It has an on-state resistance of 60 ohms and an adjustable current limit. It features reverse blocking, built-in soft start, and output discharge function. It is available in a surface-mount package that measures 1.2×1.6 mm. |
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