| Featured Products this Week |
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| 220 V Half-Bridge Gate Driver | |
Gate Driver
from STMicroelectronics
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| The STDRIVEG212 from STMicroelectronics is a Half-Bridge Gate Driver that is ideal for AC/DC and DC/DC conversion, synchronous rectification, resonant converters, adapters, and battery charger applications. It requires an input voltage of 10.3-18 V. This gate driver IC has been designed to withstand a voltage of 220 V on the high-voltage rails on the high side. It can also handle high current and supports a propagation delay of 50 ns, along with optimal delay matching. It is available in a surface-mount package that measures 4 x 5 x 1 mm. |
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| Low Voltage AOT Synchronous Buck Regulator | |
DC to DC Converter
from Kinetic Technologies
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| The KTB8316EEAA-AA-TA from Kinetic Technologies is a Low-Voltage AOT (adaptive-on-time) Synchronous Buck Regulator with a switching frequency of 1 MHz. It requires an input voltage of 2.5-5.5 V and supports an adjustable output voltage of 0.30-1.65 V. This DC-DC converter delivers an output current of up to 2.5 A and maintains a high output-voltage accuracy of ±0.75%. It has an adaptive-on-time control that delivers fast and accurate transient response with transitions between auto-skip and PWM modes. It offers peak efficiency up to about 90%. |
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| ISO 14001-Rated Multilayer Chip Inductors | |
Power Inductor
from Bourns
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| The CE1005Q Series from Bourns are Multilayer Chip Inductors. They have an inductance of 0.3-150 nH and a tolerance of up to ±0.3%. These ISO 14001-rated power inductors have a rated current of 140-1000 mA and a DCR rating of 0.08-3.2 ohms. They have an SRF of up to 10000 MHz and operate from -55°C to +125°C. These RoHS-compliant power inductors feature a monolithic structure achieved through advanced multilayer technology. They are available in surface-mount packages that measure 1 x 0.5 x 0.5 mm and are ideal for RF and wireless communication, and noise filters. |
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| 1200 V SiC Half-Bridge MOSFET | |
MOSFET
from SemiQ
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| The GCMS1P4B120S4B1 from SemiQ is a Silicon Carbide (SiC) Half-Bridge MOSFET. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of up to 4 V, and a drain-source on-resistance of up to 2.3 milli-ohms. This MOSFET has a continuous drain current of 813 A and a pulsed drain current of 2000 A. This RoHS-compliant MOSFET includes a Kelvin reference for stable operation and has an isolated baseplate. It is tested at voltages exceeding 1350 V and can be mounted directly to a heat sink. It is available as a module that measures 152 x 62.0 x 21.0 mm. |
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| Automotive-Grade Thick Film Chip Power Resistors | |
Power Resistor
from Panasonic Corporation
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| The ERJ PC6 Series from Panasonic Corporation are Automotive-Grade Super High Precision Thick Film Chip Power Resistors. These resistors have a resistance of 300 ohm to 1 megaohm with a resistance tolerance of up to ±0.1% and 300 ohm to 5.11 megaohm with a resistance tolerance of up to ±0.5%. They have a power rating of 0.25 W and a limiting element voltage of 150 V. These AEC-Q200-compliant film resistors incorporate a thick-film resistive element. They are available in a surface-mount package that measures 2.00 x 1.25 x 0.60 mm. |
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| Low Noise Quad-Channel CMOS Operational Amplifier | |
Power Operational Amplifier
from ROHM Semiconductor
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| The BD7284FV-LBE2 from ROHM Semiconductor is a Low Noise High Speed Quad Channel CMOS Operational Amplifier. It requires a single supply voltage of 2.5-5.5 V or a dual supply voltage of ±1.25 V to ±2.75 V. It features an input offset voltage of up to 2 mV and an input bias current of 0.5 pA. It provides an output voltage of up to 50 mV and an output current of up to 50 mA. This quad-channel CMOS operational amplifier delivers a large signal voltage gain of 115 dB and has a common mode rejection ratio (CMRR) of 100 dB. It is available in a surface-mount package that measures 5.0 x 6.4 x 1.35 mm. |
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| 20 A ePower Stage GaN IC | |
PMIC
from Efficient Power Conversion
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| The EPC23110 from Efficient Power Conversion is an ePower Stage GaN IC. It requires an input voltage of up to 100 V and has a nominal bias supply voltage of 5 V. This power management IC (PMIC) operates at a PWM frequency of 3 MHz and delivers a continuous load current of 20 A. It uses EPC’s proprietary GaN IC technology and integrates an input logic interface, high-side level shifting, synchronous bootstrap charging, and gate drivers along with eGaN output FETs into one monolithic integrated circuit. This RoHS-compliant power stage IC is available in a surface-mount package that measures 3.5 x 5 mm. |
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| Hi-Rel Single-Output DC-DC Converters | |
DC to DC Converter
from Gaia Converter
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| The MGDS-100 from Gaia Converter are High Reliability Single-Output DC-DC Converters designed for aerospace, military, and high-end industrial applications. These 10:1 ultra-wide input DC-DC converters convert input voltages of 10.7-100 V to output voltages of 3.3-26 V. They use a high frequency fixed switching technique at 260 KHz, providing excellent reliability, low noise characteristics, and high power density. These DC-DC converters incorporate LC network filters to minimize reflected input current ripple and output voltage ripple. These converters are available in a through-hole package. |
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| AEC-Q200-Qualified Shielded Inductors | |
Power Inductor
from Coilcraft
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| The KTA5050 Series from Coilcraft are Automotive-Grade Shielded Inductors. These power inductors have an inductance of 65-600 nH and a self-resonant frequency of 105-480 MHz. They have a saturation current of 16.6-134.0 A and a dynamic contact resistance (DCR) of less than 3.05 milli-ohms. These AEC-Q200-qualified power inductors have an operating voltage of 100 V. They have low inductance for fast transient response and high power in a multi-phase solution. These RoHS-compliant power inductors feature soft saturation with high current ratings and low power losses. |
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| Secondary-Side Synchronous Rectification Controller | |
PMIC
from Diodes Incorporated
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| The APR3492S-13 from Diodes Incorporated is a Secondary-Side Synchronous Rectification Controller for synchronous rectification in LLC resonant converters. It requires an input voltage of 4.2-51 V. This controller supports driving both high-side and low-side n-channel MOSFETs. It has a forward voltage regulation function during channel on-time to accelerate the turn-off speed and integrates a turn-off blanking control logic to avoid cross conduction of the two channels. It is available in a surface-mount package that measures 5 x 4 x 1.65 mm. |
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| 22 kW Programmable Three-Phase Inverter | |
DC to AC Inverter
from Imperix
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| The TPI8032 from Imperix is a Programmable Three-Phase Inverter that converts a DC input voltage of 800-850 V to an AC output voltage of 400-560 V. It delivers an output power of 22 kW and has a maximum continuous phase current of 32 A. This DC-AC inverter is based on silicon carbide MOSFETs and features imperix B-Board PRO programmable controlle. It offers high power density and allows the implementation of advanced control techniques on both its DSP and FPGA. It is available in a rack-mount package that measures 480.6 x 66.1 x 690.7 mm. |
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| 600 W Automotive-Grade Asymmetric TVS Diodes | |
Power Diode
from Littelfuse
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| The TPSMB Asymmetric Series from Littelfuse are Automotive-Grade Asymmetric TVS Diodes designed for 12 V system reverse battery protection in automotive electronics. They have a standoff voltage of 15–20 V on the high side and 5 V on the low side. These JEDEC-qualified TVS diodes have a breakdown voltage of 16.7–32.4 V (K to A) and 6.8–7.4 V (A to K), delivering strong clamping performance with maximum clamping voltages of 18.6–24.4 V (K to A) and 10 V (A to K). These diodes support peak pulse currents of up to 24.6 A (K to A) and 60 A (A to K). |
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| 80 V N-Channel MOSFET | |
MOSFET
from Alpha & Omega Semiconductor
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| The AONC68816 from Alpha & Omega Semiconductor is an N-Channel MOSFET that is designed for high-frequency switching applications. It has a drain-source breakdown voltage of over 80 V, a gate threshold voltage of 2.4 V, and a drain-source on-resistance of 8.8 milli-ohms. This MOSFET has a continuous drain current of up to 119 A, pulsed drain current of 476 A, and a power dissipation of less than 166 W. It is fabricated using proprietary AlphaSGTTM N-Channel Power MOSFET technology and offers low gate charge. It is available in a surface-mount that measures 3.3 x 3.3 mm. |
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| 30 A Intelligent Power Module | |
IGBT
from Fuji Electric
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| The 6MBP30XSJ065-50 from Fuji Electric is an IPM (Intelligent Power Module). It has a collector-emitter voltage of up to 650 V, an input threshold voltage of 2.6 V, and a collector-emitter saturation voltage of up to 2.1 V. This IGBT has a collector current of 10 A and a peak forward current of 30 A. It integrates low-side IGBTs with a separate emitter configuration. This IGBT includes an under-voltage lockout (UVLO) circuitry, a built-in temperature sensor at the output, a fault signal output function, and short-circuit protection (SCP). It is available in a baseplate-mount package that measures 43 x 26 mm. |
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| 750 W DC/AC Sine Wave Inverter | |
DC to AC Inverter
from Premium PSU
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| The ODS-750-7277-U from Premium PSU is a DC/AC Sine Wave Inverter that converts a DC input voltage of 154 V to an AC output voltage of 230 V. This DC-AC inverter has a nominal input voltage of 110 V and provides an output current of 13 A. It delivers a power of 750 W and has an efficiency of 89%. This EN45545-2 approved inverter offers high input-to-output isolation of 3000 V. It features true sine-wave output with less than 2% THD and integrates internal protection features including reverse polarity, overload, peak current, and over-temperature protection. |
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| 480 V Three-Phase Power Filter | |
EMI / EMC Filter
from Delta Electronics
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| The 36TDS8 from Delta Electronics is a Three-Phase Power Filter that is suitable for electric equipment, UPS, machine tools, copy machines, automation equipment, robots, and AC motor drive applications. It has a voltage rating of 480 VAC and a current rating of 36 A. This power filter has a leakage current of less than 160 mA and an inductance of 1.3 mH. It is available in a chassis-mount package that measures 200 x 150 x 65 mm. |
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