The 1EDB9275FXUMA1 from Infineon Technologies is a Single-Channel Isolated Gate Driver IC that is designed to drive Si, SiC, and GaN power switches. It requires an input voltage of 3-15 V and provides a sourcing output current of 5 A and a sinking output current of 9 A. It provides an output voltage of 15.5-20 V and a maximum power dissipation of 1380 mW. This gate driver provides isolation by means of on-chip coreless transformer (CT) technology. It offers tight timing specifications and is designed for fast switching of medium-to-high power systems. This JEDEC-qualified gate driver has excellent common-mode rejection, low part-to-part skew, fast signal propagation, and small package size, making it a superior alternative to high-side driving solutions using optocouplers or pulse transformers. It offers an input-to-output propagation delay of 45 ns with excellent accuracy (+6/-4 ns) and has separate low impedance source and sink outputs. 

This UL 1577-certified gate driver benefits from fast clamping of parasitics-induced output overshoots under UVLO conditions while ensuring fast start-up times and fast recovery after supplying glitches. It possesses high common-mode transient immunity and has an optimised UVLO level of 14.9 V / 14.4 V (ON/OFF) for Si, SiC, and GaN transistors. This gate driver is available in a surface-mount package that measures 5 x 4 mm and is ideal for server and telecom switch-mode power supplies (SMPS), EV off-board chargers, low-voltage drives and power tools, solar micro inverters and solar optimizers, industrial power supplies, including SMPS, and residential UPS.