2EP100RXTMA1

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2EP100RXTMA1 Image

The 2EP100RXTMA1 from Infineon Technologies is a Dual-Channel Full-Bridge Transformer Gate Driver IC that has been designed to drive IGBTs and SiC MOSFETs. It requires an input voltage of 4.5 - 20 V and delivers an output power of 5 W. This gate driver IC supports up to 5 W output power supplies. It offers a wide frequency range of operation with an internal oscillator or external clock and provides highly accurate duty-cycle adjustment. This gate driver benefits from an adjustable over-current threshold, under-voltage lockout (UVLO) monitoring, short circuit protection for power outputs and over-temperature protection. It also supports a soft start function and includes ready output status function to indicate normal operation.


This JEDEC47-qualified gate driver IC is available in a surface-mount package that measures 3 x 3 x 1.04 mm and is ideal for industrial motor drives, solar inverters, UPS and energy storage systems, welding, commercial air-conditioning, high-voltage DC-DC converters and DC-AC inverters, isolated switch-mode power supplies and power meter applications.

Product Specifications

Product Details

  • Part Number
    2EP100RXTMA1
  • Manufacturer
    Infineon Technologies
  • Description
    5 W Dual-Channel Full-Bridge Transformer Gate Driver IC

General

  • Types of Gate Driver
    Transformer Driver
  • Technology
    IGBT, SiC MOSFET
  • Configuration
    Isolated
  • No of Drivers
    Dual
  • Number of Outputs
    Dual
  • Input Voltage
    4.5 to 20 V
  • Propagation Delay
    340 ns
  • Temperature operating range
    -40 to 125 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSSOP-8
  • Dimensions
    3 x 3 x 1.04 mm
  • Applications
    Commercial HVAC, Energy Storage Systems, EV charging, Industrial motor drives and controls, Photovoltaic

Technical Documents