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AOD6B65MQ1E

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The AOD6B65MQ1E from Alpha & Omega Semiconductor is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.9 to 2.36 V, DC Collector Current 6 to 12 A, Peak Collector Current 18 A, DC Forward Current 6 to 12 A. More details for AOD6B65MQ1E can be seen below.

Product Specifications

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Product Details

  • Part Number
    AOD6B65MQ1E
  • Manufacturer
    Alpha & Omega Semiconductor
  • Description
    650 V, Single Switch IGBT

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.9 to 2.36 V
  • DC Collector Current
    6 to 12 A
  • Peak Collector Current
    18 A
  • DC Forward Current
    6 to 12 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -10 to 10 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    38 to 96 W
  • Package
    TO252 DPAK
  • Package Type
    Surface Mount
  • Industry
    Automotive, Industrial, Commercial
  • Applications
    Motor drives, Home appliance applications, Other hard switching applications

Technical Documents
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