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DIM1000ASM65-UF000

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The DIM1000ASM65-UF000 from Dynex Semiconductor is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.6 to 4.1 V, DC Collector Current 1000 A, Peak Collector Current 2000 A, DC Forward Current 1000 A. More details for DIM1000ASM65-UF000 can be seen below.

Product Specifications

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Product Details

  • Part Number
    DIM1000ASM65-UF000
  • Manufacturer
    Dynex Semiconductor
  • Description
    6500 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT View all
  • No. of Transistors
    Triple
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3.6 to 4.1 V
  • DC Collector Current
    1000 A
  • Peak Collector Current
    2000 A
  • DC Forward Current
    1000 A
  • Peak Forward Current
    2000 A
  • Junction Temperature
    125 Degree C
  • Gate Emitter Leakage Current
    1uA
  • Collector Emitter Voltage
    6500 V
  • Power Dissipation
    13900 W
  • Package Type
    Module View all
  • Applications
    High Reliability Inverters, Motor Controllers, Traction drives, Choppers

Technical Documents
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