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GKF07N65

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The GKF07N65 from Galaxy Century Microelectronics is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.72 to 2.05 V, DC Collector Current 7 to 14 A, Peak Collector Current 21 A, DC Forward Current 7 to 14 A. More details for GKF07N65 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GKF07N65
  • Manufacturer
    Galaxy Century Microelectronics
  • Description
    650 V, 7 to 14 A, Single Field Stop Trench IGBT

General

  • Types
    Field Stop Trench IGBT View all
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.72 to 2.05 V
  • DC Collector Current
    7 to 14 A
  • Peak Collector Current
    21 A
  • DC Forward Current
    7 to 14 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    ±0.2 µA
  • Operating Temperature
    -55 to 150 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    36 W
  • Package
    TO-220MF
  • Package Type
    Through Hole View all
  • Industry
    Military, Industrial, Commercial
  • Applications
    Uninterruptible power supplies, Solar inverter
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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