The MBN1200F33F-C3 from Hitachi Energy is an Integrated IGBT Module that combines Hitachi’s advanced trench IGBT with a SiC Schottky diode to deliver ultra-low switching and conduction losses. It has a collector-emitter breakdown voltage of over 3300 V, a gate threshold voltage of 6.5 V, and a saturated collector-emitter voltage of 2.85 V. This IGBT has a continuous collector current of up to 1200 A and can withstand an isolation voltage of 6000 VAC. It supports low switching spikes and reduced EMI due to the soft low-injection punch-through design. This IGBT has low gate driving power and an ultra-low recovery loss. It prevents stray inductance and offers high current capability. This RoHS-compliant IGBT is available as a module that measures 140 x 130 x 38 mm.