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FF1200R17KP4_B2

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FF1200R17KP4_B2 Image

The FF1200R17KP4_B2 from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.80 to 2.70 V, DC Collector Current 1200 A, Peak Collector Current 2400 A, DC Forward Current 1200 A. More details for FF1200R17KP4_B2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FF1200R17KP4_B2
  • Manufacturer
    Infineon Technologies
  • Description
    1700 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT View all
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.80 to 2.70 V
  • DC Collector Current
    1200 A
  • Peak Collector Current
    2400 A
  • DC Forward Current
    1200 A
  • Peak Forward Current
    2400 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    1400000 W
  • Package
    A-IHM130
  • Package Type
    Chassis Mount View all
  • Applications
    High Power Converters, Motor Drives, UPS Systems, Wind Turbines, Medium voltage converters
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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