1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Infineon Technologies
  6. FF225R17ME4P

FF225R17ME4P

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

FF225R17ME4P Image

The FF225R17ME4P from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.95 to 2.45 V, DC Collector Current 225 A, Peak Collector Current 450 A, DC Forward Current 225 A. More details for FF225R17ME4P can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FF225R17ME4P
  • Manufacturer
    Infineon Technologies
  • Description
    1700 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT View all
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.95 to 2.45 V
  • DC Collector Current
    225 A
  • Peak Collector Current
    450 A
  • DC Forward Current
    225 A
  • Peak Forward Current
    450 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    0.02 W
  • Package
    AG-ECONOD
  • Package Type
    Chassis Mount View all
  • Applications
    Moter Drives, UPS Systems, Wind turbines, servo Drives
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products