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FP50R12KS4C

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FP50R12KS4C Image

The FP50R12KS4C from Infineon Technologies is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.20 to 3.85 V, DC Collector Current 50 A, Peak Collector Current 100 A, DC Forward Current 50 A. More details for FP50R12KS4C can be seen below.

Product Specifications

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Product Details

  • Part Number
    FP50R12KS4C
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT View all
  • No. of Transistors
    Seven
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3.20 to 3.85 V
  • DC Collector Current
    50 A
  • Peak Collector Current
    100 A
  • DC Forward Current
    50 A
  • Peak Forward Current
    100 A
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    360 W
  • Package
    AG-ECONO3
  • Package Type
    Chassis Mount View all
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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