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MIW50N65F Image

The MIW50N65F from Micro Commercial Components is a Field Stop Trench IGBT that has been designed to offer high-speed and smooth switching operation for hard and soft-switching applications. It has a collector-emitter breakdown voltage of over 650 V, a gate threshold voltage of 5.05 V, and a collector-emitter saturation voltage of 1.6 V. This IGBT has a continuous collector current of up to 85 A and a pulsed collector current of less than 200 A. It has a power dissipation of less than 326 W. This trench IGBT exhibits positive temperature coefficient characteristics for the collector-emitter saturation voltage curve and ensures good thermal stability. It also complies with the UL 94 V-0 flammability standard for enhanced safety during operation. This RoHS-compliant IGBT is available in a through-hole package that measures 15.50 x 4.80 mm.

Product Specifications

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Product Details

  • Part Number
    MIW50N65F
  • Manufacturer
    Micro Commercial Components
  • Description
    650 V High-Speed Field Stop Trench IGBT

General

  • Types
    Field Stop Trench IGBT View all
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.6 to 2.05 V
  • DC Collector Current
    60 to 85 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.2 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    326 W
  • Package
    TO-247AB
  • Package Type
    Through Hole View all
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes

Technical Documents

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