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GD100FFL170C6S

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GD100FFL170C6S Image

The GD100FFL170C6S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.4 to 2.9 V, DC Collector Current 157 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD100FFL170C6S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD100FFL170C6S
  • Manufacturer
    StarPower
  • Description
    1700 V IGBT Module

General

  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.4 to 2.9 V
  • DC Collector Current
    157 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    714 W
  • Package Type
    Module View all
  • Applications
    Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Technical Documents
View details on the manufacturer's website
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