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GD100HFK120C2S

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GD100HFK120C2S Image

The GD100HFK120C2S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.15 to 2.65 V, DC Collector Current 180 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD100HFK120C2S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD100HFK120C2S
  • Manufacturer
    StarPower
  • Description
    1200 V IGBT Module

General

  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.15 to 2.65 V
  • DC Collector Current
    180 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    758 W
  • Package Type
    Module View all
  • Applications
    Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Technical Documents
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