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GD100HFU120C2S

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GD100HFU120C2S Image

The GD100HFU120C2S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.1 to 3.6 V, DC Collector Current 200 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD100HFU120C2S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD100HFU120C2S
  • Manufacturer
    StarPower
  • Description
    1200 V IGBT Module

General

  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3.1 to 3.6 V
  • DC Collector Current
    200 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1136 W
  • Package Type
    Module View all
  • Applications
    Switching mode power supply, Inductive heating, Electronic welder

Technical Documents
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