1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. StarPower
  6. GD100HHU120C6S

GD100HHU120C6S

Download Datasheet Request Quote

Note : Your request will be directed to StarPower.

GD100HHU120C6S Image

The GD100HHU120C6S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3 to 3.8 V, DC Collector Current 146 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD100HHU120C6S can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    GD100HHU120C6S
  • Manufacturer
    StarPower
  • Description
    1200 V IGBT Module

General

  • No. of Transistors
    Quad
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3 to 3.8 V
  • DC Collector Current
    146 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    771 W
  • Package Type
    Module View all
  • Applications
    Switching mode power supply, Inductive heating, Electronic welder

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products