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GD10PJK120L2S

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GD10PJK120L2S Image

The GD10PJK120L2S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.45 to 3 V, DC Collector Current 20 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD10PJK120L2S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD10PJK120L2S
  • Manufacturer
    StarPower
  • Description
    1200 V IGBT Module

General

  • No. of Transistors
    Seven
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.45 to 3 V
  • DC Collector Current
    20 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    93 W
  • Package Type
    Module View all
  • Applications
    Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Technical Documents
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