1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. StarPower
  6. GD150HHU120C6S

GD150HHU120C6S

Download Datasheet Request Quote

Note : Your request will be directed to StarPower.

GD150HHU120C6S Image

The GD150HHU120C6S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.9 to 3.6 V, DC Collector Current 230 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD150HHU120C6S can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    GD150HHU120C6S
  • Manufacturer
    StarPower
  • Description
    1200 V IGBT Module

General

  • No. of Transistors
    Quad
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.9 to 3.6 V
  • DC Collector Current
    230 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1179 W
  • Package Type
    Module View all
  • Applications
    Switching mode power supply, Inductive heating, Electronic welder

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products