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GD200HFK120C2S

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GD200HFK120C2S Image

The GD200HFK120C2S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.15 to 2.65 V, DC Collector Current 340 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD200HFK120C2S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD200HFK120C2S
  • Manufacturer
    StarPower
  • Description
    1200 V IGBT Module

General

  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.15 to 2.65 V
  • DC Collector Current
    340 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1359 W
  • Package Type
    Module View all
  • Applications
    Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Technical Documents
View details on the manufacturer's website
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