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GD400HFU120C2S

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GD400HFU120C2S Image

The GD400HFU120C2S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.1 to 3.6 V, DC Collector Current 660 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD400HFU120C2S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD400HFU120C2S
  • Manufacturer
    StarPower
  • Description
    1200 V IGBT Module

General

  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3.1 to 3.6 V
  • DC Collector Current
    660 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    2660 W
  • Package Type
    Module View all
  • Applications
    Switching mode power supply, Inductive heating, Electronic welder

Technical Documents
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