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GD50HFU120C1S

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GD50HFU120C1S Image

The GD50HFU120C1S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.15 to 3.6 V, DC Collector Current 78 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD50HFU120C1S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD50HFU120C1S
  • Manufacturer
    StarPower
  • Description
    1200 V IGBT Module

General

  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3.15 to 3.6 V
  • DC Collector Current
    78 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    414 A
  • Package Type
    Module View all
  • Applications
    Switching mode power supplies, Inductive heating, Electronic welder

Technical Documents
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