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GD50HHU120C5S

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GD50HHU120C5S Image

The GD50HHU120C5S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.9 to 3.6 V, DC Collector Current 77 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD50HHU120C5S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD50HHU120C5S
  • Manufacturer
    StarPower
  • Description
    1200 V IGBT Module

General

  • No. of Transistors
    Quad
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.9 to 3.6 V
  • DC Collector Current
    77 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    396 W
  • Package Type
    Module View all
  • Applications
    Switching mode power supply, Inductive heating, Welding machine

Technical Documents
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