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GD50PIK120C6S

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GD50PIK120C6S Image

The GD50PIK120C6S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.15 to 2.6 V, DC Collector Current 90 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD50PIK120C6S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD50PIK120C6S
  • Manufacturer
    StarPower
  • Description
    1200 V IGBT Module

General

  • No. of Transistors
    Seven
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.15 to 2.6 V
  • DC Collector Current
    90 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    370 W
  • Package Type
    Module View all
  • Applications
    Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Technical Documents
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