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GD75FFL170C6S

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The GD75FFL170C6S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.4 to 2.9 V, DC Collector Current 119 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD75FFL170C6S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD75FFL170C6S
  • Manufacturer
    StarPower
  • Description
    1700 V IGBT Module

General

  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.4 to 2.9 V
  • DC Collector Current
    119 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    549 W
  • Package Type
    Module View all
  • Applications
    Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Technical Documents
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