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GD75HCU120C8S

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GD75HCU120C8S Image

The GD75HCU120C8S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.9 to 3.6 V, DC Collector Current 110 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD75HCU120C8S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD75HCU120C8S
  • Manufacturer
    StarPower
  • Description
    1200 V IGBT Module

General

  • No. of Transistors
    Quad
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.9 to 3.6 V
  • DC Collector Current
    110 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    595 W
  • Package Type
    Module View all
  • Applications
    Switching mode power supplies, Inductive heating, Electronic welder

Technical Documents
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