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GD75HFL170C1S

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GD75HFL170C1S Image

The GD75HFL170C1S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.4 to 2.9 V, DC Collector Current 120 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD75HFL170C1S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD75HFL170C1S
  • Manufacturer
    StarPower
  • Description
    1700 V IGBT Module

General

  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.4 to 2.9 V
  • DC Collector Current
    120 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    572 W
  • Package Type
    Module View all
  • Applications
    Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Technical Documents
View details on the manufacturer's website
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