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VS-GT200TS065N

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The VS-GT200TS065N from Vishay is a IGBT with Gate Emitter Voltage ±20 V, Saturated Collector Emitter Voltage 1.46 to 2.3 V, DC Collector Current 144 to 193 A, Peak Collector Current 450 A, DC Forward Current 108 to 144 A. More details for VS-GT200TS065N can be seen below.

Product Specifications

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Product Details

  • Part Number
    VS-GT200TS065N
  • Manufacturer
    Vishay
  • Description
    650 V, 1.46 to 2.3 V, 144 to 193 A, Half Bridge IGBT

General

  • Types
    Half Bridge IGBT View all
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    ±20 V
  • Dimensions
    35.4 x 94.4 x 30 mm
  • Saturated Collector Emitter Voltage
    1.46 to 2.3 V
  • DC Collector Current
    144 to 193 A
  • Peak Collector Current
    450 A
  • DC Forward Current
    108 to 144 A
  • Peak Forward Current
    144 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.1 to 100 µA
  • Operating Temperature
    -40 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    328 to 517 W
  • Package
    INT-A-PAK
  • Package Type
    Chassis Mount View all
  • Switching Speed
    34 to 120 ns
  • Industry
    Industrial, Commercial
  • Applications
    Optimized for high current inverter stages, Direct mounting on heatsink, Very low junction to case thermal resistance
  • RoHS Compliant
    Yes
  • Note
    Gate Emitter Threshold Voltage :- 3 to 5 V

Technical Documents
View details on the manufacturer's website
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