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WG30N65HJ1

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The WG30N65HJ1 from WeEN Semiconductors is a IGBT with Gate Emitter Voltage ±20 V, Saturated Collector Emitter Voltage 1.55 to 2.05 V, DC Collector Current 17 to 28 A, Peak Collector Current 90 A, Junction Temperature 175 Degree. More details for WG30N65HJ1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    WG30N65HJ1
  • Manufacturer
    WeEN Semiconductors
  • Description
    650 V, 17 to 28 A, Single Field Stop Trench IGBT

General

  • Types
    Field Stop Trench IGBT View all
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    ±20 V
  • Saturated Collector Emitter Voltage
    1.55 to 2.05 V
  • DC Collector Current
    17 to 28 A
  • Peak Collector Current
    90 A
  • Junction Temperature
    175 Degree
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    33 to 67 W
  • Package
    TO3PF
  • Package Type
    Through Hole View all
  • Industry
    Industrial, Commercial
  • Applications
    PFC, Solar converters, UPS, Welding Converters, Mid to high range switching frequency converters
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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