2SK596C

Junction Field Effect Transistor (JFET) by Kexin

Note : Your request will be directed to Kexin.

2SK596C Image

The 2SK596C from KEXIN is an N-channel Silicon Junction Field Effect Transistor that is ideal for industrial and commercial applications. It has a gate-source voltage of -20 V and a drain saturation current of 350 µA. This junction field effect transistor (JFET) has a power dissipation of less than 100 mW. This JFET is manufactured using field effect bipolar transistor (FBET) process and offers excellent voltage and transient characteristics. It is available in a surface-mount package that measures 2.9 x 1.3 x 0.97 mm.

Product Specifications

Product Details

  • Part Number
    2SK596C
  • Manufacturer
    Kexin
  • Description
    N-channel Silicon Junction Field Effect Transistor for Industrial Applications

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon View all
  • Transistor Polarity
    N-Channel View all
  • Drain Saturation Current
    210 to 350 µA
  • Number of Channel
    Single View all
  • Gate Source Voltage
    -20 V
  • Forward Transfer Admittance
    0.4 to 1.2 mS
  • Continous Drain Current
    1 mA
  • Gate Current
    10 mA
  • Power Dissipation
    100 mW
  • Operating Temperature
    -55 to 150 Degree C
  • Input Capacitance
    3.5 pF
  • Package Type
    Surface Mount View all
  • Package
    SOT-23
  • Dimension
    2.9 x 1.3 x 0.97 mm
  • Application
    Excellent Voltage characteristic, Excellent transient characteristic, Adoption of FBET process.

Technical Documents