MX2N5116UB

Junction Field Effect Transistor (JFET) by Microchip Technology (17 more products)

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MX2N5116UB Image

The MX2N5116UB from Microchip Technology is a P-Channel Junction Field Effect Transistor that is ideal for high-reliability military applications. It has a drain-source voltage of up to 30 V and a drain-source on-resistance of less than 175 ohms. This RoHS-compliant switch has a power dissipation of less than 0.5 W. It is available in a low-profile ceramic surface-mount package that measures 3.25 x 2.74 x 1.42 mm.

Product Specifications

Product Details

  • Part Number
    MX2N5116UB
  • Manufacturer
    Microchip Technology
  • Description
    30 V P-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial, Military
  • Transistor Polarity
    P-Channel
  • Number of Channel
    Single
  • Gate Source Voltage
    30 V
  • Continous Drain Current
    -5.0 to -25 mA
  • Drain Source Breakdown Voltage
    30 V
  • Drain Source Resistance
    175 Ohm
  • Gate Current
    50 mA
  • Gate Reverse Current
    500 pA
  • Power Dissipation
    0.500 W
  • Operating Temperature
    -65 to 200 Degree C
  • Input Capacitance
    27 pF
  • Package Type
    Surface Mount
  • Package
    TO-18
  • Fall Time
    20 ns
  • Rise Time
    35 ns
  • RoHS Compliant
    Yes
  • Dimension
    3.25 x 2.74 x 1.42 mm
  • Application
    High reliability military applications

Technical Documents