GA20SICP12-263

Junction Field Effect Transistor (JFET) by Navitas Semiconductor (10 more products)

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The GA20SICP12-263 from Navitas Semiconductor is a Junction Field Effect Transistor (JFET) with Continous Drain Current 20 to 45 A, Drain Source Breakdown Voltage 1200 V, Drain Source Resistance 0.05 to 0.095 Ohm, Gate Current 1.3 A, Gate Reverse Current 1.3 A. Tags: Surface Mount. More details for GA20SICP12-263 can be seen below.

Product Specifications

Product Details

  • Part Number
    GA20SICP12-263
  • Manufacturer
    Navitas Semiconductor
  • Description
    1200 V, 1.3 A, Silicon N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Single
  • Continous Drain Current
    20 to 45 A
  • Drain Source Breakdown Voltage
    1200 V
  • Drain Source Resistance
    0.05 to 0.095 Ohm
  • Gate Current
    1.3 A
  • Gate Reverse Current
    1.3 A
  • Power Dissipation
    56 to 282 W
  • Gate Charge
    105 nC
  • Operating Temperature
    -55 to 175 Degree C
  • Input Capacitance
    2870 pF
  • Package Type
    Surface Mount
  • Package
    TO-263-7L
  • Fall Time
    13 ns
  • Rise Time
    12 ns
  • RoHS Compliant
    Yes
  • Application
    Down Hole Oil Drilling, Geothrmal Instrumentation, Hybrid Electric Vehicles (HEV), Solar Inverters, Switched-Mode Power Supply (SMPS), Power Factor Correction (PFC), Induction Heating, Uniterruptible Power Supply (UPS), Motor Drivers

Technical Documents