GR1500JT17-263

Junction Field Effect Transistor (JFET) by Navitas Semiconductor (10 more products)

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The GR1500JT17-263 from Navitas Semiconductor is a Junction Field Effect Transistor (JFET) with Continous Drain Current 2 A, Drain Source Breakdown Voltage 1700 V, Drain Source Resistance 1.5 Ohm, Gate Current 0.1 A, Operating Temperature -55 to 175 Degree C. Tags: Through Hole. More details for GR1500JT17-263 can be seen below.

Product Specifications

Product Details

  • Part Number
    GR1500JT17-263
  • Manufacturer
    Navitas Semiconductor
  • Description
    1700 V, 0.1 A, Silicon N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Single
  • Continous Drain Current
    2 A
  • Drain Source Breakdown Voltage
    1700 V
  • Drain Source Resistance
    1.5 Ohm
  • Gate Current
    0.1 A
  • Operating Temperature
    -55 to 175 Degree C
  • Package Type
    Through Hole
  • Package
    TO-263-7L
  • RoHS Compliant
    Yes
  • Application
    Down Hole Oil Drilling, Geothrmal Instrumentation, Hybrid Electric Vehicles (HEV), Solar Inverters, Switched-Mode Power Supply (SMPS), Power Factor Correction (PFC), Induction Heating, Uniterruptible Power Supply (UPS), Motor Drivers

Technical Documents