2N5457

Junction Field Effect Transistor (JFET) by New Jersey Semiconductor (218 more products)

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The 2N5457 from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Drain Saturation Current 1.0 to 5.0 mA, Gate Source Voltage 25 V, Forward Transfer Admittance 1000 to 5000 mS, Drain Source Breakdown Voltage 25 V, Gate Current 10 mA. Tags: Through Hole. More details for 2N5457 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N5457
  • Manufacturer
    New Jersey Semiconductor
  • Description
    25 V, 10 mA, N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Drain Saturation Current
    1.0 to 5.0 mA
  • Number of Channel
    Single
  • Gate Source Voltage
    25 V
  • Forward Transfer Admittance
    1000 to 5000 mS
  • Drain Source Breakdown Voltage
    25 V
  • Gate Current
    10 mA
  • Gate Reverse Current
    1.0 nA
  • Power Dissipation
    0.31 W
  • Operating Temperature
    -65 to 150 Degree C
  • Input Capacitance
    7.0 pF
  • Package Type
    Through Hole
  • Package
    TO-92

Technical Documents