2N5566

Junction Field Effect Transistor (JFET) by New Jersey Semiconductor (218 more products)

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The 2N5566 from New Jersey Semiconductor is a Junction Field Effect Transistor (JFET) with Drain Saturation Current 5 to 30 mA, Gate Source Voltage -40 V, Forward Transfer Admittance 7 mS, Drain Source Resistance 100 Ohm, Gate Current 50 mA. Tags: Through Hole. More details for 2N5566 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N5566
  • Manufacturer
    New Jersey Semiconductor
  • Description
    -40 V, 50 mA, N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Transistor Polarity
    N-Channel
  • Drain Saturation Current
    5 to 30 mA
  • Number of Channel
    Dual
  • Gate Source Voltage
    -40 V
  • Forward Transfer Admittance
    7 mS
  • Drain Source Resistance
    100 Ohm
  • Gate Current
    50 mA
  • Gate Reverse Current
    -200 nA
  • Power Dissipation
    0.65 W
  • Operating Temperature
    -55 to 150 Degree C
  • Input Capacitance
    12 pF
  • Noise Figure
    1 dB
  • Package Type
    Through Hole
  • Package
    TO-71
  • Application
    Wideband Differential Amps, High-Speed, Temp-Compensated, Single-Ended Input Amps, High-Speed Comparators, Impedance Converters, Matched Switches

Technical Documents