NTE2910

Junction Field Effect Transistor (JFET) by NTE Electronics (21 more products)

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NTE2910 Image

The NTE2910 from NTE Electronics is a Junction Field Effect Transistor (JFET) with Drain Saturation Current 5 to 30 mA, Gate Source Voltage -40 V, Forward Transfer Admittance 6 mS, Drain Source Resistance 100 Ohm, Gate Current 50 mA. Tags: Through Hole. More details for NTE2910 can be seen below.

Product Specifications

Product Details

  • Part Number
    NTE2910
  • Manufacturer
    NTE Electronics
  • Description
    1.8 W, 50 mA, Silicon N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Drain Saturation Current
    5 to 30 mA
  • Number of Channel
    Single
  • Gate Source Voltage
    -40 V
  • Forward Transfer Admittance
    6 mS
  • Drain Source Resistance
    100 Ohm
  • Gate Current
    50 mA
  • Power Dissipation
    1.8 W
  • Operating Temperature
    -55 to 200 Degree C
  • Input Capacitance
    12 to 14 pF
  • Package Type
    Through Hole
  • Package
    TO-18
  • Fall Time
    13 to 30 ns
  • Rise Time
    2 to 5 ns

Technical Documents