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NTE466

Junction Field Effect Transistor (JFET) by NTE Electronics
21 more product from this company
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NTE466 Image

The NTE466 from NTE Electronics is a High-Speed SiC Junction Field Effect Transistor that is ideal for industrial and commercial applications. It has a drain-source breakdown voltage of -40 V and a drain-source on-resistance of 25 milli-ohms. This fiel

Product Specifications

Product Details

  • Part Number
    NTE466
  • Manufacturer
    NTE Electronics
  • Description
    -40 V High-Speed SiC Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon View all
  • Transistor Polarity
    N-Channel View all
  • Number of Channel
    Single View all
  • Gate Source Voltage
    -40 V
  • Continous Drain Current
    50 mA
  • Drain Source Breakdown Voltage
    40 V
  • Drain Source Resistance
    25 milli-ohms
  • Gate Current
    50 mA
  • Gate Reverse Current
    0.25 nA
  • Power Dissipation
    0.36 W
  • Operating Temperature
    -65 to 175 Degree C
  • Input Capacitance
    18 pF
  • Package Type
    Through Hole View all
  • Package
    TO-218
  • Fall Time
    25 ns
  • Rise Time
    3 ns
  • RoHS Compliant
    Yes View all
  • Dimension
    18.03 x 5.84 mm

Technical Documents
View details on the manufacturer's website