Junction Field Effect Transistor (JFET) by NTE Electronics (21 more products)

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NTE466 Image

The NTE466 from NTE Electronics is a High-Speed SiC Junction Field Effect Transistor that is ideal for industrial and commercial applications. It has a drain-source breakdown voltage of -40 V and a drain-source on-resistance of 25 milli-ohms. This field-effect transistor (FET) has a continuous drain current of up to 50 mA and a power dissipation of less than 0.36 W. This RoHS-compliant JFET exhibits an extremely fast switching speed that is not affected by variations in temperature. It is available in a through-hole package that measures 18.03 x 5.84 mm.

Product Specifications

Product Details

  • Part Number
  • Manufacturer
    NTE Electronics
  • Description
    -40 V High-Speed SiC Junction Field Effect Transistor


  • Industry
    Industrial, Commercial
  • Technology
  • Transistor Polarity
  • Number of Channel
  • Gate Source Voltage
    -40 V
  • Continous Drain Current
    50 mA
  • Drain Source Breakdown Voltage
    40 V
  • Drain Source Resistance
    25 milli-ohms
  • Gate Current
    50 mA
  • Gate Reverse Current
    0.25 nA
  • Power Dissipation
    0.36 W
  • Operating Temperature
    -65 to 175 Degree C
  • Input Capacitance
    18 pF
  • Package Type
    Through Hole
  • Package
  • Fall Time
    25 ns
  • Rise Time
    3 ns
  • RoHS Compliant
  • Dimension
    18.03 x 5.84 mm

Technical Documents