Junction Field Effect Transistor (JFET) by onsemi (44 more products)

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J112-D26Z Image

The J112-D26Z from onsemi is a N- Channel Junction Field Effect Transistor. It has a gate-source breakdown voltage of over -35 V and a drain-source on-resistance up to 100 ohms. This JFET is designed for low-level analog switching, sample and hold circuits, and chopper-stabilized amplifiers. It features interchangeable source and drain pins, enhancing its versatility. This lead-free JFET is available in through-hole package measuring 20.95 x 5.20 mm.

Product Specifications

Product Details

  • Part Number
  • Manufacturer
  • Description
    -35 V N-Channel Junction Field Effect Transistor


  • Industry
    Industrial, Commercial
  • Transistor Polarity
  • Drain Saturation Current
    5.0 mA
  • Number of Channel
  • Gate Source Voltage
    -35 V
  • Drain Source Resistance
    100 Ohms
  • Gate Current
    50 mA
  • Gate Reverse Current
    -1.0 nA
  • Power Dissipation
    0.625 W
  • Operating Temperature
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
  • Dimension
    20.95 x 5.20 mm

Technical Documents