UF3N170400B7S

Junction Field Effect Transistor (JFET) by Qorvo (6 more products)

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UF3N170400B7S Image

The UF3N170400B7S from Qorvo is a Junction Field Effect Transistor (JFET) with Gate Source Threshold Voltage -11.3 to -6.7 V, Continous Drain Current 5.1 to 6.8 A, Drain Source Breakdown Voltage 1700 V, Drain Source Resistance 0.35 to 1.04 Ohm, Power Dissipation 68 W. Tags: Surface Mount. More details for UF3N170400B7S can be seen below.

Product Specifications

Product Details

  • Part Number
    UF3N170400B7S
  • Manufacturer
    Qorvo
  • Description
    68 W, SiC, N-Channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Single
  • Gate Source Threshold Voltage
    -11.3 to -6.7 V
  • Continous Drain Current
    5.1 to 6.8 A
  • Drain Source Breakdown Voltage
    1700 V
  • Drain Source Resistance
    0.35 to 1.04 Ohm
  • Power Dissipation
    68 W
  • Gate Charge
    30 nC
  • Operating Temperature
    -55 to 175 Degree C
  • Input Capacitance
    225 pF
  • Package Type
    Surface Mount
  • Package
    DPAK-7L
  • Fall Time
    37 ns
  • Rise Time
    19 ns
  • RoHS Compliant
    Yes
  • Application
    Over Current Protection Circuits, DC-AC Inverters, Switch mode power supplies, Power factor correction modules, Motor drives, Induction heating