UJ3N120035K3S

Junction Field Effect Transistor (JFET) by Qorvo (6 more products)

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UJ3N120035K3S Image

The UJ3N120035K3S from Qorvo is a Junction Field Effect Transistor that is ideal for over-current protection circuits, DC-AC inverters, switch mode power supplies (SMPS), power factor correction modules, motor drives, and induction heating applications. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of -11.5 V, and a drain-source on-resistance of 35 milli-ohms. This field effect transistor (FET) has a continuous drain current of up to 63 A and a power dissipation of less than 429 W. It exhibits low intrinsic capacitance and gate charge, allowing for low conduction and switching loss. This RoHS-compliant SiC FET exhibits extremely fast switching characteristics that is not affected due to variations in temperature. It is available in a through-hole package.

Product Specifications

Product Details

  • Part Number
    UJ3N120035K3S
  • Manufacturer
    Qorvo
  • Description
    1200 V Junction Field Effect Transistor for SMPS Applications

General

  • Industry
    Industrial, Commercial
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channel
    Single
  • Gate Source Threshold Voltage
    -11.5 V
  • Continous Drain Current
    63 A
  • Drain Source Breakdown Voltage
    1200 V
  • Drain Source Resistance
    35 milli-ohms
  • Power Dissipation
    429 W
  • Gate Charge
    235 nC
  • Operating Temperature
    -55 to 175 Degree C
  • Input Capacitance
    2145 pF
  • Package Type
    Through Hole
  • Package
    TO-247-3L
  • Fall Time
    39 ns
  • Rise Time
    37 ns
  • RoHS Compliant
    Yes
  • Application
    Over Current Protection Circuits, DC-AC Inverters, Switch mode power supplies, Power factor correction modules, Motor drives, Induction heating

Technical Documents