2SK880-BL(TE85L,F)

Junction Field Effect Transistor (JFET) by Toshiba

Note : Your request will be directed to Toshiba.

2SK880-BL(TE85L,F) Image

The 2SK880 from Toshiba is an N-channel Junction Field Effect Transistor that is ideal for industrial and commercial applications. It has a gate-source voltage of less than -1.5 V and a gate-drain voltage of -50 V. This transistor has a power dissipation of less than 100 mW. It is available in a surface-mount package that measures 2.0 x 2.1 mm and is ideal for audio frequency low noise amplifier applications.

Product Specifications

Product Details

  • Part Number
    2SK880-BL(TE85L,F)
  • Manufacturer
    Toshiba
  • Description
    -50 V N-channel Junction Field Effect Transistor

General

  • Industry
    Industrial, Commercial
  • Technology
    Silicon View all
  • Transistor Polarity
    N-Channel View all
  • Number of Channel
    Single View all
  • Gate Source Voltage
    -1.5 V
  • Forward Transfer Admittance
    4.0 to 15 mS
  • Continous Drain Current
    1.2 to 14.0 mA
  • Gate Current
    10 mA
  • Gate Reverse Current
    -1.0 nA
  • Power Dissipation
    100 mW
  • Operating Temperature
    -55 to 125 Degree C
  • Input Capacitance
    13 pF
  • Noise Figure
    1 to 5 dB
  • Package Type
    Surface Mount View all
  • Package
    SOT-323
  • Dimension
    2.0 x 2.1 mm
  • Application
    Audio Frequency Low Noise Amplifier Applications

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