Insulated Gate Bipolar Transistors (IGBTs) are semiconductor devices that combine the high-efficiency and fast-switching capabilities of MOSFETs with the high-current and voltage-handling capacity of bipolar transistors. These versatile components are integral to power electronics, enabling efficient energy management in critical applications such as electric vehicles, renewable energy systems, industrial automation, and power grids. In this article, everything PE has listed some interesting IGBTs that were trending on the website in 2024.
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1200 V Field Stop Trench IGBT
The DIM900M1HS12-PG500 from Dynex Semiconductor is a Field Stop Trench IGBT that is ideal for motor drives, power charging equipment, solar power, and electric vehicle applications. It has a collector-emitter voltage of less than 1200 V, a saturated collector-emitter voltage of 1.45 V, and a gate-emitter voltage of ±20 V. This IGBT is available as a module that measures 151.8 x 62 mm. Read more.
750 V Hex-Channel IGBT for Automotive Applications
The 6MBI800XV-075V-01 from Fuji Electric is a Hex-Channel IGBT that is ideal for automotive system applications. It has a collector-to-emitter voltage of up to 750 V, a gate-emitter threshold voltage of 6.3 V, and a collector-to-emitter saturation voltage of 1.8 V. This hex-channel IGBT supports reverse conduction and includes two on-chip temperature and current sensors to prevent abnormal conditions. It is available in a module that measures 149.5 x 116 mm. Read more.
1200 V Phase Leg Trench and Field Stop IGBT
The APTGL475A120D3G from Microchip Technology Phase leg Trench and Field Stop IGBT Power Module that is ideal for welding converters, switched mode power supplies, uninterruptible power supplies, and motor control applications. It has a collector-emitter breakdown voltage of up to 1200 V, a saturated collector-emitter voltage of 1.8 V, and a gate-emitter voltage of ±20 V. This RoHS-compliant IGBT is available in a module that measures 108 x 31 mm. Read more.
1200 V Hex-Channel IGBT for UPS Applications
The MG75P12E2 from Yangjie Electronic Technology is a Hex-Channel IGBT that is ideal for motor drivers, AC and DC servo drive amplifiers, and UPS applications. It has a collector-to-emitter voltage of up to 1200 V, a gate-emitter threshold voltage of 5.8 V, and a saturated collector-to-emitter voltage of 1.85 V. This RoHS-compliant IGBT has a low collector-emitter saturation voltage, exhibits positive temperature coefficient, and offers high short circuit capability in a low inductance case. It is available in a module that measures 122.5 x 62.5 x 20.5 mm. Read more.
1200 V Soft Switching IGBT Module
The SKiiP 11AC12T7V1 from Semikron Danfoss is an IGBT Module. It has a collector-emitter breakdown voltage of over 1200 V, a gate threshold voltage of 5.8 V, and a saturated collector-emitter of 1.6 V. This module has highly reliable spring contacts for electrical connections and measures 42 x 40 x16 mm. Read more.
4500 V Trench + Field Stop IGBT for Traction Applications
The FF450R45T3E4B5BPSA1 from Infineon Technologies is a Trench + Field Stop IGBT that is ideal for traction drives and medium-voltage converter applications. It has a collector-emitter breakdown voltage of up to 4500 V, a saturated collector-emitter voltage of 2.35 V, and a gate-emitter voltage of 6 V. This EN45545-2-rated IGBT is available in a module that measures 127 x 99.8 x 40 mm. Read more.
1200 V Trench IGBT for Inverters & UPS
The GD50PIY120C6S from StarPower is an IGBT that is ideal for UPS, general inverters for driving motors, and AC and DC servo drive amplifiers. It has a collector-emitter breakdown voltage of over 1200 V, a gate threshold voltage of 6 V, and a saturated collector-emitter voltage of 1.7 V. It is available in a module that measures 122 x 62 mm. Read more.
1200 V Field Stop Trench IGBT for Solar Inverter Applications
The DGTD120T25S1PT from Diodes Incorporated is a Field Stop Trench IGBT that is ideal for motor drives, UPS, welders, solar inverters, and IH cooker applications. It has a collector-emitter voltage of less than 1200 V, a saturated collector-emitter voltage of 2.40 V, and a gate-emitter threshold voltage of up to 6 V. This RoHS-compliant IGBT is available in a through-hole package that measures 42.03 x 16.26 mm. Read more.
650 V High-Speed IGBT for UPS Applications
The WG50N65DHW from WeEN Semiconductors is a High-speed IGBT that is ideal for power factor correction, welding converters, solar inverters, industrial inverters, and uninterrupted power supply (UPS) applications. It has a collector-emitter breakdown voltage of over 650 V, a gate threshold voltage of 6 V, and a saturated collector-emitter voltage of up to 2 V. This RoHS-compliant IGBT features a trench gate field-stop design and offers low thermal resistance. It is available in a through-hole package that measures 41.5 x 15.75 x 5.2 mm.
1200 V Dual Switch IGBT Module
The CM1200DW-24T from Mitsubishi Electric is a Dual Switch IGBT Module that is ideal for photovoltaic (PV) inverters, AC motor control, and power supply applications. It has a collector-emitter breakdown voltage of over 1200 V, a gate threshold voltage of 6 V, and a saturated collector-emitter voltage of 1.55 V. This RoHS-compliant IGBT is available as a module that measures 144 x 99.8 mm. Read more.
600 V High-Side Chopper Trench IGBT for UPS Applications
The VS-GT75NA60UF from Vishay is a High-Side Chopper Trench IGBT that is ideal for increased operating efficiency in power conversion, UPS, SMPS, welding, and induction heating applications. It has a collector-emitter breakdown voltage of over 600 V, a gate threshold voltage of 3.9 V, and a saturated collector-emitter voltage of 1.60 V. This UL-approved IGBT is available in a surface-mount package that measures 37.80 x 24.70 mm. Read more.
600 V Single Switch IGBT for Power Factor Correction Applications
The RJQ6008BDPM from Renesas is a Single Switch IGBT that is ideal for power factor correction (PFC) applications. It has a collector-emitter voltage of up to 600 V, a gate-emitter voltage of ±30 V, and a saturated collector-emitter voltage of 1.8 V. This IGBT is available in a standard through-hole package that measures 15.6 x 39.6 mm. Read more.
Field Stop Trench IGBT for General Inverter Applications
The MG7213WZ from ROHM Semiconductor is a Field Stop Trench IGBT ideal for general inverter and industrial applications. It has a collector-emitter breakdown voltage of over 1200 V, a gate threshold voltage of 6 V, and a saturated collector-emitter voltage of 1.7 V. It is available as a bare die that measures 9.2 x 9.2 mm. Read more.
650 V Field-Stop Trench IGBT for Motor Drive Applications
The AOTF15B65M3 from Alpha & Omega Semiconductor is a Field-Stop Trench IGBT ideal for motor drives, sewing machines, home appliances, fans, pumps, vacuum cleaners, and other hard-switching applications. It has a collector-emitter breakdown voltage of over 650 V, a gate threshold voltage of 5.1 V, and a saturated collector-emitter voltage of 1.95 V. It is available in a through-hole package. Read more.
2500 V Single Switch IGBT for Power Supply Applications
The IXGH25N250 from Littelfuse is a Single Switch IGBT Module that is ideal for pulse circuits, capacitor discharge circuits, high-voltage power supplies, high-voltage test equipment, laser & X-ray generators, and capacitor discharge applications. It has a collector-to-emitter voltage of up to 2500 V and a saturated collector-to-emitter voltage of 2.9 V. This single-switch IGBT is available in a through-hole package that measures 16.26 x 21.46 x 5.3 mm. Read more.
650 V Silicon N-Channel Enhancement Mode IGBT for Welding Applications
The GT30J65MRB,S1E from Toshiba is a Silicon N-Channel Enhancement Mode IGBT that is ideal for power factor correction (PFC), current-resonant inverter switching, and welding applications. It has a collector-emitter voltage of less than 650 V, a saturated collector-emitter voltage of 1.4 V, a gate threshold voltage of up to 6.2 V. It is available in a through-hole package that measures 15.5 x 4.5 mm. Read more.
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Note: This list has been compiled based on user activity on everything PE. To ensure that we cover the whole range of IGBTs we limited the number of products from each category and company. The listed products are shown in random order and are grouped by category.
