Founded in 2014 and based in Torrance, California, Navitas Semiconductor is a pioneering company that specializes in gallium nitride (GaN) power integrated circuits (ICs). Their goal is to redefine power electronics by providing compact, fast, and efficient power solutions that support environmental sustainability and energy conservation.
Navitas' primary offerings include GaNFast power ICs, which integrate GaN power, drive, control, sensing, and protection functionalities into a single device. Compared to conventional silicon-based solutions, these ICs allow for faster charging, better power densities, and increased energy efficiency. Complementing this, their GeneSiC power devices focus on high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. These products serve a wide range of customers in the fields of mobile devices, consumer electronics, data centers, electric vehicles (EVs), renewable energy, and industry.
Navitas partnered with Compuware to set new benchmarks in efficiency and power density for data center power supplies. To accelerate the adoption of EVs, it established a development agreement with BRUSA. In order to jointly develop next-generation mobile fast chargers, Navitas and Anker inked a strategic alliance. Additionally, it collaborated with WT Microelectronics and Avnet Silica to grow the market for sophisticated GaN power ICs.
Navitas has developed the industry's first 650 V bi-directional GaN power integrated circuits (ICs). These ICs are designed to simplify circuit designs by reducing component count, thereby enhancing efficiency and power density in applications requiring bidirectional energy flow. Building on over two decades of SiC innovation, Navitas introduced third-generation silicon carbide MOSFETs. Its proprietary 'trench-assisted planar' technology offers superior performance over a wide temperature range, enabling faster switching and improved robustness. These characteristics are particularly beneficial for EVs and high-power AI data centers.
Navitas showcased an 8.5 kW Open Compute Project (OCP) power solution achieving 98% efficiency, tailored for AI and hyperscale data centers. This design incorporates high-power GaNSafe power ICs and Gen-3 Fast SiC MOSFETs in 3-phase interleaved continuous conduction mode (CCM) totem-pole power factor correction (PFC) and 3-phase LLC topologies. Navitas developed a 4.5 kW power supply with a power density of 137 W/in³ and an efficiency of over 97% in response to the growing power requirements of AI GPUs. Navitas' GaNFast power ICs are integral to OPPO's 50 W Mini SuperVOOC Charger, Anker's 100 W Fast Charger and Lenovo's Xiaoxin 105W and Legion C170W Chargers.
Navitas is at the forefront of transitioning from traditional silicon-based power electronics to advanced GaN and SiC technologies. Their GaN power ICs solve important consumer concerns and promote wider EV market penetration by enabling faster charging and longer range.
In order to handle the growing power requirements of contemporary computing infrastructures, Navitas' solutions facilitate the construction of energy-efficient data centers. Navitas enables more efficient use of sustainable energy sources by enhancing power conversion in renewable energy systems.
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