The NV6169 from Navitas Semiconductor is a GaN Power Transistor. It has a continuous drain-source voltage of up to 650 V, a transient drain-source voltage of up to 800 V and a drain-source on-state resistance of up to 55 milli-ohms. This GaN transistor has a continuous drain current of 24 A and a pulsed drain current of 66 A. It integrates a high-performance eMode GaN FET with an integrated gate drive to achieve high-frequency and high-efficiency operation. This GaN transistor utilizes GaNSense technology that enables real-time, accurate sensing of voltage, current and temperature. This technology also enables integrated lossless current sensing, which eliminates external current sensing resistors and increases system efficiency. It also enables short circuit and over-temperature protection to increase system robustness, while auto-standby mode increases light, tiny and no-load efficiency.

This GaN IC offers high dV/dt immunity and has a high-speed integrated drive. It is available in a surface-mount package that measures 8 x 8 mm and is ideal for AC-DC, DC-DC, ACF, buck, boost, half bridge, full bridge, LLC resonant, Class D, PFC, motor drive, TV SMPS, server and telecom applications.