ROHM’s 4th Gen SiC MOSFET Adopted in Toyota’s bZ5 Crossover BEV

ROHM’s 4th Gen SiC MOSFET Adopted in Toyota’s bZ5 Crossover BEV

ROHM has announced that its fourth-generation silicon carbide (SiC) MOSFET bare chip has been adopted in the power module used in the traction inverter of Toyota Motor Corporation’s latest crossover battery electric vehicle (BEV), the “bZ5.” The bZ5 is a new crossover-type BEV developed jointly by Toyota, BYD, and FAW Toyota Motor. It was officially launched by FAW Toyota for the Chinese market in June 2025. 

The power module adopted this time has started mass production shipments from HAIMOSIC (SHANGHAI), a joint venture between ROHM and Zhenghai Group. ROHM's power solutions, centered on SiC MOSFETs, contribute to the extended range and enhanced performance of the new BEV. ROHM aims to complete the construction of the production line for the next-generation 5th generation SiC MOSFET by 2025, and is also accelerating the market introduction plans for the 6th and 7th generations, focusing on the development of SiC power devices. ROHM will continue to improve device performance and production efficiency, and strengthen the system to provide SiC in various forms such as bare chips, discrete components, and modules, promoting the spread of SiC and contributing to the creation of a sustainable mobility society.

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