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Power Electronics Industry Update This Week - 4 June 2024

June 4 2024 Newsletter - everything PE

Top stories this week. View it in your browser

 
Weekly Edition
Date: June 4 2024
 
Sponsored by PEMD 2024
 
 
Latest News this Week
News
Eaton Acquires Exertherm to Expand Thermal Monitoring Solutions

Eaton
News
JinkoSolar to Supply 84 MWh Utility Energy Storage System to ACLE

Jinko Solar
News
Diodes Incorporated Unveils High Current Load Switches for Power Management Applications

Diodes Incorporated
News
EPC to Showcase Advanced GaN Power Conversion Solutions at PCIM Europe 2024

Efficient Power Conversion
News
Panasonic Introduces Cylindrical Lithium Battery for IoT Sensing Applications

Panasonic Corporation
News
Cambridge GaN Devices and ITRI Sign MoU to Develop GaN-Based Power Devices

Cambridge GaN Devices
News
RECOM Launches AC-DC Power Supplies for Industrial Control Applications

Recom Power
News
Infineon Unveils 400 V Silicon Carbide MOSFETs for Enhancing AI Server Power Supplies

Infineon Technologies
News
Bel Power Solutions to Showcase eMobility Power Supplies at iVT Expo

Bel Power Solutions
News
Soitec Partners with Tokai Carbon to Develop Silicon Carbide Substrates

Soitec
News
Alpha and Omega Semiconductor Introduces Multiphase Buck Controller for Computing Systems

Alpha & Omega Semiconductor
News
Pulse Electronics Introduces Automotive Grade Flyback Gate Drive Transformer for IGBT Switching Applications

Pulse Electronics
News
Taiwan Semiconductor Unveils Bi-Directional ESD Protection Diodes for Power Management Systems

Taiwan Semiconductor
News
Vishay Intertechnology Unveils Wirewound Resistors for Automotive and Industrial Electronics

Vishay
Sponsored by PEMD 2024
PEMD 2024
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PEMD is a world-leading forum on power electronics, machines and drives, where industry and academia converge to network, publish results of exciting new research, showcase technical advances, and share knowledge with a growing community.The high-quality, technically focused program includes peer-reviewed paper sessions, keynote addresses from thought leaders, industry briefing sessions, and interactive tutorials. Click here to learn more.
New White Papers & Articles
The benefits of using non-isolated DC-DC converters - TDK Corporation
Reducing Cost of Solar with In-Line Fuses - Littelfuse
Designing VME Power Systems from Standard Modules - VPT
Revolutionary High Voltage IGBT Driver Family with Reinforced Galvanic Isolation for Switching Semiconductors up to 1200 V - Power Integrations
High Current LED - Capacitive Drop Drive - onsemi
More Whitepapers
Trending Gan Transistors
GaN Power Transistor
650 V GaN Field Effect Transistor for SMPS Applications
GaN Power Transistor  from Transphorm

The TP65H100G4LSGB-TR from Transphorm is a GaN Field Effect Transistor that combines state-of-the-art high-voltage GaN HEMT with a low-voltage silicon MOSFET to offer superior reliability and performance. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of 3.65 V, and a drain-source on-resistance of 92 milli-ohms. This transistor has a continuous drain current of up to 18.9 A and a pulsed drain current of less than 95 A.
Download Datasheet Product Details
GaN Power Transistor
100 V Enhancement Mode GaN-on-Silicon Power Transistor
GaN Power Transistor  from Innoscience

The INN100W070A from Innoscience is an Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for synchronous rectification,class-D audio, high frequency DC-DC converter, communication base station and motor driver applications. This GaN transistor has a drain-source voltage of over 100 V, a gate threshold voltage of 1.1 V, and a drain-source on-resistance of 5.5 milli-ohms. It has a continuous drain current of up to 29 A.
Download Datasheet Product Details
Sponsored by PEMD 2024
 
 
GaN Power Transistor
600 V Enhancement Mode GaN Power Transistor for SMPS Applications
GaN Power Transistor  from Infineon Technologies

The IGLR60R260D1 from Infineon Technologies is an Enhancement Mode GaN Power Transistor. This transistor has a drain-source voltage of up to 600 V, a gate threshold voltage of less than 1.6 V, and a drain-source on-resistance of 370 milli-ohms. It has a continuous drain current of up to 10.4 A and a pulsed drain current of less than 15.9 A. This normally-off GaN transistor has a low gate charge and output charge in addition to zero reverse-recovery charge.
Download Datasheet Product Details
GaN Power Transistor
1000 V Depletion Mode GaN Power Transistor for Aerospace Applications
GaN Power Transistor  from Solid State Devices

The SGF15D100JUB from Solid State Devices is a Depletion Mode GaN Power Transistor that is ideal for high-efficiency DC-DC/PoL converters, motor controllers, robotics/automation, and military and aerospace applications. This power transistor has a drain-source breakdown voltage of over 1000 V, a gate threshold voltage from -27 V to -8 V, and a drain-source on-resistance of 140 milli-ohms. It has a continuous drain current of up to 15 A.
Download Datasheet Product Details
GaN Power Transistor
650 V Enhancement Mode GaN Power Transistor for UPS Applications
GaN Power Transistor  from STMicroelectronics

The SGT65R65AL from STMicroelectronics is an Enhancement Mode GaN Power Transistor that is ideal for AC-DC converters, AC-DC PSU for server and telecom, LED illumination, and uninterrupted power supply (UPS) applications. This transistor has a drain-source voltage of up to 650 V, a gate threshold voltage of less than 1.8 V, and a drain-source on-resistance of 49 milli-ohms. It has a continuous drain current of up to 25 A and a pulsed drain current of less than 70 A.
Download Datasheet Product Details
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