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Power Electronics Industry Update This Week - 20 August 2024

August 20 2024 Newsletter - everything PE

Top stories this week. View it in your browser

 
Weekly Edition
Date: August 20 2024
 
Sponsored by PCIM Asia 2024
 
 
Latest News this Week
News
Wide Band Gap Power Device Market Expected to Reach $2.5 Billion by 2033

Allied Market Research
News
Infineon GaN Transistors Power Vitesco's High Power Density DC-DC Converters

Infineon Technologies
News
STAr Sagittarius Series Offers 20 Years of Innovation in Semiconductor Testing

STAr Sagittarius Series
News
MCC Introduces 30 V N-Channel MOSFET for Power Management Applications

Micro Commercial Components
News
Epsilor Unveils High Voltage Battery System for Military Applications

Epsilor
News
Modine Introduces EVantage Compressors and Valves for Heavy-Duty Commercial EVs

Modine
News
Cincon Electronics Unveils 100 W DC-DC Converters for Power Management Applications

Cincon Electronics
News
EPC to Showcase Innovative GaN Power Solutions at PCIM Asia 2024

Efficient Power Conversion
News
Discrete Semiconductor Market Projected to Reach USD 44.2 Billion by 2033

The Brainy Insights
News
Knowles Corporation Introduces Snubber Network for Transient Voltage Suppression

Knowles Precision Devices
News
Vishay Intertechnology Unveils Wirewound Ferrite Inductors for Consumer Applications

Vishay
News
Diodes Incorporated Unveils Non-Isolated Buck Converter for IoT and Smart Devices

Diodes Incorporated
News
Ideal Power Announces Global Distribution Agreement with RYOSHO U.S.A.

Ideal Power Inc.
News
Entegris Enters Into Long Term Silicon Carbide Supply Agreement with onsemi

onsemi
Sponsored by PCIM Asia 2024
PCIM Asia 2024
PCIM Asia 2024
PCIM Asia 2024 is an international meeting ground for specialists in power electronics and its applications in drive technologies and power quality. The event offers a chance to see the latest developments in power electronics components and systems. The strong link between the conference and the exhibition guarantees the high quality of the show. This unique combination fosters the fast and easy exchange between industry and science. It is one of the most influential and user-driven platform for power electronics in Asia, which is held alongside the exhibition. Click here to learn more.
New White Papers & Articles
Capacitor bank protection design considerations - Eaton
Gallium nitride technology in adapter and charger applications - Infineon Technologies
Charge Control Methods for SuperCapacitors - Kyocera AVX
Discover the path to ultra-cool, compact, and efficient fast charging with the world’s most efficient 65W USB-C reference design from Pulsiv - Pulsiv
Bourns PFB Transformer in Narrowband PLC Coupling Circuit Designs for Smart Energy Infrastructure - Bourns
More Whitepapers
Trending MOSFETS
MOSFET
250 V N-Channel MOSFET for Power Factor Correction Applications
MOSFET  from Magnachip Semiconductor

The MDD7N25RH from Magnachip Semiconductor is an N-Channel MOSFET that is ideal for switched mode power supplies (SMPS), high-intensity discharge lamps (HID), LED TV, power factor correction (PFC), and general-purpose applications. This MOSFET has a drain-source breakdown voltage of over 250 V, a gate threshold voltage of up to 5 V, and a drain-source on-resistance of less than 0.55 ohms. It has a continuous drain current of up to 6.2 A.
Download Datasheet Product Details
MOSFET
20 V N-Channel DMOS-Based Power MOSFET for Cellular Applications
MOSFET  from Torex Semiconductor

The XP161A1265PR-G from Torex Semiconductor is an N-channel Power MOSFET that is ideal for notebook PCs, cellular and portable phones, onboard power supplies, and Li-ion battery system applications. It has a drain-source breakdown voltage of 20 V, a gate-to-source voltage of ±12 V, and a drain-source on-resistance of less than 95 milli-ohms. This power MOSFET has a continuous drain current of up to 4 A and a power dissipation of less than 2 W.
Download Datasheet Product Details
Sponsored by PCIM Asia 2024
 
 
MOSFET
1200 V 3-Phase SiC MOSFET for Inverter Applications
MOSFET  from Cissoid

The CXT-PLA3SA12450A from Cissoid is a 3-phase SiC MOSFET that is ideal for inverter applications. It has a drain-source voltage of up to 1200 V, a gate threshold voltage of up to 2.15 V, and a drain-source on-resistance of 3.25 milli-ohms. This MOSFET has a continuous drain current of up to 450 A and a pulsed drain current of less than 720 A. It integrates power switches and the gate driver based on the CISSOID HADES2 chipset providing fast switching speed.
Download Datasheet Product Details
MOSFET
30 V Dual Asymmetric N-Channel MOSFET for DC-DC Converter Applications
MOSFET  from Alpha & Omega Semiconductor

The AONG36322 from Alpha & Omega Semiconductor is a Dual-Asymmetric N-channel MOSFET that is ideal for DC-DC converters, servers, POL, telecom, and industrial applications. It has a drain-source breakdown voltage of over 30 V, a gate threshold voltage of 1.7 V, and a drain-source on-resistance of less than 6.8 milli-ohms. This MOSFET has a continuous drain current of up to 103 A and a power dissipation of less than 59 W.
Download Datasheet Product Details
MOSFET
1700 V Half-Bridge SiC Power MOSFET for Medical Applications
MOSFET  from Wolfspeed

The CAB320M17XM3 from Wolfspeed is a Half-Bridge SiC Power MOSFET that is ideal for energy, medical, motor, and motion control, test and production equipment, transportation, and traction inverter applications. It has a drain-source breakdown voltage of over 1700 V, a drain-source voltage of up to 1700 V, and a drain-source on-resistance of 4.6 milli-ohms. This power module has a continuous drain current of up to 438 A and a power dissipation of less than 50 mW.
Download Datasheet Product Details
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