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Power Electronics Industry Update This Week - 17 September 2024

September 17 2024 Newsletter - everything PE

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Weekly Edition
Date: September 17 2024
 
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Latest News this Week
News
Toshiba Introduces High Speed Photorelay to Enhance Semiconductor Testing Efficiency

Toshiba

News
Allegro Microsystems Introduces Current Sensors for AI Data Center Applications

Allegro MicroSystems

News
Infineon Unveils 30 V Power MOSFET for Battery Powered Applications

Infineon Technologies

News
MCC Unveils Automotive Grade TVS Diode for Electrostatic Discharge Protection

Micro Commercial Components

News
A&K Robotics Forges Strategic Partnerships to Enhance Electrification in Canada

Delta-Q Technologies

News
CODACA Launches High Current Power Inductor for Industrial Power Systems

CODACA Electronic

News
P-DUKE Introduces 20 W DC-DC Converters for Railway and Industrial Applications

P-DUKE Power

News
Nexperia Unveils Automotive Qualified Single and Dual Small Signal MOSFETs

Nexperia

News
Recom Power Acquires LECO to Expand High End Power Product Design and Manufacturing

Recom Power

News
Magnachip Semiconductor Unveils 40 V Power MOSFETs for Automotive Applications

Magnachip Semiconductor

News
knitter-inductive Unveils Common Mode Chokes for Interference Suppression in AC Networks

knitter-switch

News
Knowles Unveils MIL-PRF-55681-Qualified Capacitors for Mission-Critical Defense Applications

Knowles Precision Devices

News
Wolfspeed Unveils 2300 V Silicon Carbide Modules for Renewable Energy and Energy Storage Applications

Wolfspeed

News
PANJIT Semiconductor Introduces ESD Protection Diodes for High-Speed Applications

PANJIT Semiconductor

Sponsored by London EV Show 2024
London EV Show 2024
London EV Show 2024
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New White Papers & Articles
Application of Next-Generation Motor Management Relays to Improve System Reliability in Process Industries - Eaton
When Is It Beneficial to Place a Copper Layer Beneath DC/DC Power Supplies - Monolithic Power Systems
New Buck-Boost Controller Offers Versatile Solutions for USBPD Fast Charging - Richtek
CFB800 Series - Cincon Electronics
Surge Protective Devices for Photovoltaic Applications - Bourns
More Whitepapers
Featured Interview
Featured Interview
Interview with Tomoharu Yamamoto from Torex Semiconductor
everything PE recently interviewed Tomoharu Yamamoto, Director, Corporate Officer, GM Sales and Marketing HQs at Torex Semiconductor. Torex Semiconductor specializes in designing and manufacturing analog and mixed-signal semiconductor products.Click here to learn more.
Trending MOSFETs
MOSFET
40 V Automotive-Qualified Logic Level N-Channel Trench MOSFET
MOSFET  from Magnachip Semiconductor

The AMDV040N029LVRH from Magnachip Semiconductor is an Automotive-Qualified N-Channel Logic Level Trench MOSFET ideal for motor drive systems and switching applications. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of up to 2.5 V, and a drain-source on-resistance of less than 5 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of up to 112 A and a power dissipation of less than 65 W.
Download Datasheet Product Details
MOSFET
80 V Single N-Channel MOSFET for Motor Drive Applications
MOSFET  from onsemi

The NTMFS4D0N08XT1G from onsemi is a Single N-channel MOSFET that has been designed for synchronous rectification in DC-DC and AC-DC converters, primary switch in isolated DC-DC converters, and motor drive applications. It has a drain-source breakdown voltage of over 80 V, a gate threshold voltage of up to 3.6 V, and a drain-source on-resistance of less than 3.5 milli-ohms. This MOSFET has a continuous drain current of up to 119 A.
Download Datasheet Product Details
MOSFET
Automotive-Qualified P-Channel Enhancement Mode MOSFET
MOSFET  from Toshiba

The XPN19014MC from Toshiba is an Automotive-Qualified P-Channel Enhancement Mode MOSFET that is ideal for automotive, switching voltage regulators, DC-DC converters, and motor driver applications. It has a drain-source breakdown voltage of over -40 V, a gate threshold voltage of less than -1 V, and a drain-source on-resistance of up to 18.7 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of up to -20 A and a power dissipation of less than 65 W.
Download Datasheet Product Details
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MOSFET
20 V N-Channel DMOS-Based Power MOSFET for Cellular Applications
MOSFET  from Torex Semiconductor

The XP161A1265PR-G from Torex Semiconductor is an N-channel Power MOSFET that is ideal for notebook PCs, cellular and portable phones, onboard power supplies, and Li-ion battery system applications. It has a drain-source breakdown voltage of 20 V, a gate-to-source voltage of ±12 V, and a drain-source on-resistance of less than 95 milli-ohms. This power MOSFET has a continuous drain current of up to 4 A and a power dissipation of less than 2 W.
Download Datasheet Product Details
MOSFET
1200 V 3-Phase SiC MOSFET for Inverter Applications
MOSFET  from Cissoid

The CXT-PLA3SA12450A from Cissoid is a 3-phase SiC MOSFET that is ideal for inverter applications. It has a drain-source voltage of up to 1200 V, a gate threshold voltage of up to 2.15 V, and a drain-source on-resistance of 3.25 milli-ohms. This MOSFET has a continuous drain current of up to 450 A and a pulsed drain current of less than 720 A. It integrates power switches and the gate driver based on the CISSOID HADES2 chipset providing fast switching speed.
Download Datasheet Product Details
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