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Power Electronics Industry Update This Week - 8 October 2024

October 8, 2024 Newsletter - everything PE

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Weekly Edition
Date: October 8, 2024
 
Sponsored by DigiKey
 
 
Latest News this Week
News
Forsee Power Unveils 1500 V EV Battery for High Energy Rail Traction Battery System

Forsee Power

News
Infineon Technologies Unveils 20 Gbps Universal USB Peripheral Controller

Infineon Technologies

News
Danisense Unveils Current Transducers for Data Acquisition Systems

Danisense

News
NREL Selected to Redesign Traction Inverter for U.S. Military Ground Vehicles

NREL

News
Mitsubishi Electric Supplies 12-inch Wafers for Semiconductor Module Assembly

Mitsubishi Electric

News
Raytheon Secures DARPA Contract to Develop Ultra Wide Bandgap Semiconductors

Raytheon

News
Toshiba Unveils Three Phase Gate Driver ICs for Industrial DC Motors

Toshiba

News
TDK Unveils Programmable AC Power Sources for E-Mobility Applications

TDK Corporation

News
Vishay Intertechnology Introduces Magnetically Shielded Power Inductors for Commercial and Automotive Applications

Vishay

News
VoxPower to Showcase Innovative Power Solutions and Launch New Product at Electronica 2024

Vox Power

News
Bourns Introduces AEC-Q200 Compliant Transformer for High Voltage Battery Management Systems

Bourns

News
DENSO and ROHM Semiconductor Announce Strategic Partnership to Enhance Automotive Electrification

ROHM Semiconductor

News
Advanced Energy Introduces 1300 W Isolated DC-DC Converter for Telecom Wireless Base Stations

Advanced Energy Industries

News
Tektronix and EA Elektro-Automatik to Showcase Test and Measurement Solutions at electronica 2024

EA Elektro-Automatik

Sponsored by DigiKey
Infineon Residential Energy Storage Systems
Infineon Residential Energy Storage Systems
Infineon’s energy storage systems excel in efficiency, performance, optimal cost, and innovation. Offering discretes based on Si, SiC, GaN, IGBT modules, integrated Easy 1B/2B modules, EiceDRIVER™ gate driver ICs, XMC™ and PSoC™ controllers.Click here to learn more.
New White Papers & Articles
Current source inverter vs. Voltage source inverter topology - Eaton
Reaching Beyond 1200 V: Lateral GaN HEMTs for High-Reliability EV and Industrial Applications - Power Integrations
How to Make a 10 kW Bidirectional AC-DC Converter - Recom Power
Charge Control Methods for SuperCapacitors - Kyocera AVX
Method of lifetime estimation of EcoGaN in soft-switching operations - ROHM Semiconductor
More Whitepapers
Trending Junction Field Effect Transistors
Junction Field Effect Transistor (JFET)
-35 V N-Channel Junction Field Effect Transistor
Junction Field Effect Transistor (JFET)  from onsemi

The J112-D26Z from onsemi is a N- Channel Junction Field Effect Transistor. It has a gate-source breakdown voltage of over -35 V and a drain-source on-resistance up to 100 ohms. This JFET is designed for low-level analog switching, sample and hold circuits, and chopper-stabilized amplifiers. It features interchangeable source and drain pins, enhancing its versatility. This lead-free JFET is available in through-hole package measuring 20.95 x 5.20 mm.
Download Datasheet Product Details
Junction Field Effect Transistor (JFET)
Symmetrical N-channel Junction Field Effect Transistor for Switching Applications
Junction Field Effect Transistor (JFET)  from NXP Semiconductors

The PMBFJ108 from NXP Semiconductors is a Symmetrical N-channel Junction Field Effect Transistor that is ideal for high-speed switching applications. It has a gate-drain voltage and a gate-source voltage of -25 V. This junction field effect transistor (JFET) has a power dissipation of less than 250 mW. It benefits from the interchangeability of drain and source connections and has low drain-source on-resistance for zero gate voltage.
Download Datasheet Product Details
Sponsored by DigiKey
 
 
Junction Field Effect Transistor (JFET)
1200 V Automotive-Qualified SiC Junction Field Effect Transistor
Junction Field Effect Transistor (JFET)  from Qorvo

The UJ3N120070K3S from Qorvo is an Automotive-Qualified SiC Junction Field Effect Transistor that is ideal for over-current protection circuits, DC-AC inverters, switched mode power supplies, power factor correction modules, motor drives, and induction heating applications. It has a drain-source voltage of up to 1200 V and a drain-source on-resistance of 70 milli-ohms. This transistor has a drain current of up to 33.5 A. It is a third-generation-based normally-on device.
Download Datasheet Product Details
Junction Field Effect Transistor (JFET)
-57 V N-Channel Junction Field Effect Transistor (JFET)
Junction Field Effect Transistor (JFET)  from Solid State Devices

The SFF4393GW from Solid State Devices is an N-Channel Junction Field Effect Transistor (JFET) that is ideal for industrial and commercial applications. It has a gate-source voltage of -57 V and a drain saturation current of up to 30 mA. This junction field effect transistor (JFET) has a power dissipation of less than 1.8 W. It has a low ON resistance, ensuring efficient operation with minimal power loss. This transistor has a low capacitance.
Download Datasheet Product Details
Junction Field Effect Transistor (JFET)
P-channel Junction Field Effect Transistor for Chopper Applications
Junction Field Effect Transistor (JFET)  from InterFET

The P1086 from InterFET is a P-channel Junction Field Effect Transistor that is ideal for chopper and analog switch applications. It has a gate-source voltage and gate-drain voltage of 30 V. This transistor has a power dissipation of less than 360 mW. This junction field effect transistor (JFET) offers low noise and low drain-source resistance, ensuring efficient operation. This JFET is available in a through-hole package that measures 19.83 x 4.78 mm.
Download Datasheet Product Details
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