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Power Electronics Industry Update This Week - 11 August 2025

11 August 2025 Newsletter - everything PE

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Weekly Edition
Date: 11 August 2025
 
Sponsored by Smart Data for Energy Summit
 
 
Latest News this Week
News
Bourns Launches High Power High Ripple Chokes

Bourns
News
Super Junction MOSFETs for AI Server and Telecom Power

WeEN Semiconductors
News
Forge Nano Develops 100% U.S.-Sourced Li-ion Battery for DoD

Forge Nano
News
Eaton Acquires Resilient Power to Advance Solid-State Transformer Technology

Eaton
News
Nexperia Launches ESD Protection Diodes for USB4 and Thunderbolt Interfaces

Nexperia
News
Diodes Launches High-Speed HDMI ReDrivers with Enhanced Signal Integrity

Diodes Incorporated
News
Innoscience and NVIDIA Team Up on 800 VDC GaN AI Data Center Power

Innoscience
News
Havis Launches DC Power Supplies for Panasonic TOUGHBOOK Devices

Havis
News
KnowMade Releases Q2 2025 GaN Power Electronics Patent Monitor

Knowmade
News
Flex Unveils Power Shelf to Accelerate 800 VDC AI Data Centers

Flex Power Modules
News
Kyma and Novel Crystal Partner to Advance Gallium Oxide Epitaxial Wafers

Kyma Technologies
News
Danisense Unveils Low-Noise Interface Unit for Precision Current Transducers

Danisense
News
Teradyne Launches HBM Memory Tester for AI and HPC Innovation

Teradyne
News
Navitas' GaNSense ICs Power Xiaomi’s Ultra-Compact 90 W GaN Charger

Navitas Semiconductor
Sponsored by Smart Data for Energy Summit
Smart Data for Energy Summit
Smart Data for Energy Summit
The 3rd Annual Smart Data for Energy Summit is a senior-level educational and networking event that aims to promote collaboration among large built environments in utilizing smart, data-driven capabilities for energy optimization in planning, design, build, retrofit, management, and daily operations and maintenance phases. Click here to learn more.
New White Papers & Articles
Next generation of high power phase-controlled thyristor and rectifier diode - Hitachi Energy
Low Voltage Energy Harvesting and Storage for Wireless Condition Monitoring - Nichicon
ROHM's EcoGaN Solutions Contribute to Greater Miniaturization and Energy Savings - ROHM Semiconductor
Facilitation to Smooth Operation of New-Generation Power System - Sungrow Corporation
SelVCD: A Revolutionary Way of Driving Power MOSFETs in Gate Driver Applications - Skyworks Solutions
More Whitepapers
Featured Products this Week
MOSFET
40 V Automotive Qualified N-Channel MOSFET
MOSFET  from Nexperia

The BUK7S1R0-40H from Nexperia is an Automotive Qualified N-Channel MOSFET. It has a drain-source voltage of 40 V and a gate threshold voltage of up to 3.6 V. This AEC-Q101-qualified MOSFET has a drain-source on-resistance of 1 milli-ohm and a maximum power dissipation of 375 W. It has an LFPAK88 package that is designed for a smaller footprint and improved power density. It is available in a surface-mount package that measures 8.1 x 8.1 x 1.7 mm.
Download Datasheet Product Details
AC to DC Converter
Off-line Quasi-Resonant Flyback Switcher IC
AC to DC Converter  from Power Integrations

The INN3878C-H801 from Power Integrations is an Off-line Quasi-Resonant Flyback Switcher IC that converts an AC input voltage of 85-265 V to a regulated DC output of 5-24 V. It provides an output power of up to 70 W at 230 V input and 55 W at universal input, with a switching frequency ranging from 25 to 95 kHz (typically 70 kHz at 230 V). This IC integrates a high-voltage switch, synchronous rectification, and FluxLink feedback for high efficiency and compact design.
Download Datasheet Product Details
Power Transformer
9.7 µH Flexible Transformer for DC-DC Converters
Power Transformer  from Wurth Elektronik

The 749196538 from Wurth Elektronik is a Flexible Transformer that is designed for DC-DC converters. It has an inductance of 9.7 µH and a turns ratio of 1:1:1:1:1:1. This transformer has a current rating of 1.35 A and a DC resistance of less than 102 milli-ohms. It consists of six identical windings with low leakage inductance and offers an insulation test voltage of up to 1500 V (AC). This RoHS-compliant transformer is available in a surface-mount package.
Download Datasheet Product Details
Sponsored by Smart Data for Energy Summit
 
 
GaN Power Transistor
100 V Enhancement-Mode GaN Transistor
GaN Power Transistor  from Efficient Power Conversion

The EPC2901C_55 from Efficient Power Conversion is an Enhancement-Mode GaN Transistor. This transistor has a drain-source voltage of 100 V, a gate threshold voltage of 1.6 V, and a drain-source on-resistance of less than 7 milli-ohms. It has a continuous drain current of up to 36 A and a pulsed drain current of less than 150 A. This normally off transistor achieves very low conduction losses. It is available as a die that measures 4.105 x 1.635 mm.
Download Datasheet Product Details
Power Connector
250 V Flex Cable Power Connector
Power Connector  from Bulgin

The EXP-0911-10-S-1 from Bulgin is a Power Connector that is designed for applications in hazardous areas. It has a rated voltage of 250 V and a rated current of up to 10 A. This connector accommodates cables with diameters ranging from 7 mm to 9 mm and accepts contact sizes from 0.75 mm² to 2.5 mm² (14–18 AWG). It is equipped with socket contacts and utilizes a secure screw-type coupling mechanism for reliable mating.
Download Datasheet Product Details
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